Type
IPB090N06N3 G IPP093N06N3 G
OptiMOS
™
3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC
1)
for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB090N06N3 G
IPP093N06N3 G
Product Summary
V
DS
R
DS(on),max (SMD)
I
D
60
9
50
V
mΩ
A
Package
Marking
PG-TO263-3
090N06N
PG-TO220-3
093N06N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
3)
4)
Value
50
50
200
43
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=50 A,
R
GS
=25
Ω
mJ
V
W
°C
T
C
=25 °C
71
-55 ... 175
55/175/56
J-STD20 and JESD22
Current is limited by bondwire; with an
R
thJC
=1.6 K/W the chip is able to carry 74 A.
See figure 3
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 1
2010-01-20
IPB090N06N3 G IPP093N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
minimal footprint
6 cm² cooling area
4)
-
-
-
-
-
-
1.6
62
40
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=34 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=50 A
V
GS
=10 V,
I
D
=50 A,
(SMD)
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
60
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
-
-
28
10
1
8.0
7.7
0.7
55
100
100
9.3
9
-
-
Ω
S
nA
mΩ
Rev. 1.2
page 2
2010-01-20
IPB090N06N3 G IPP093N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=45 A,
R
G
=3.5
Ω
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
-
-
-
-
-
-
2900
640
23
15
40
20
5
-
-
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=30 V,
V
GS
=0 V
V
DD
=30 V,
I
D
=50 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
16
3
11
36
5.6
29
-
-
-
-
-
-
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=30 V, I
F
=45A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
1.0
45
40
50
200
1.2
A
V
ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2010-01-20
IPB090N06N3 G IPP093N06N3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
100
90
60
50
80
70
40
60
P
tot
[W]
50
40
I
D
[A]
0
50
100
150
200
30
20
30
20
10
10
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
limited by on-state
resistance
1 µs
10 µs
10
2
10
0
10 ms
0.5
Z
thJC
[K/W]
100 µs
I
D
[A]
0.2
0.1
0.05
0.02
10
1
DC
1 ms
10
-1
10
0
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.2
page 4
2010-01-20
IPB090N06N3 G IPP093N06N3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
180
160
7V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
5V
5.5 V
6V
10 V
8V
6.5 V
140
120
R
DS(on)
[m
Ω
]
7V
I
D
[A]
6.5 V
100
80
6V
8V
10 V
60
40
20
0
0
1
2
3
4
5
5.5 V
5V
4.5 V
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
100
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
100
80
80
60
60
40
g
fs
[S]
40
175 °C
25 °C
I
D
[A]
20
20
0
0
2
4
6
8
0
0
50
100
150
V
GS
[V]
I
D
[A]
Rev. 1.2
page 5
2010-01-20
