型号
- 型号
- 关键词
67 A, 100 V, 0.0124 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
67 A, 100 V, 0.0124 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA
厂商名称：Infineon(英飞凌)
器件标准：
| 型号 | IPB12CN10NG | IPB12CN10NG_10 | IPD12CN10NG | IPI12CN10NG | IPP12CN10NG |
|---|---|---|---|---|---|
| 描述 | 67 A, 100 V, 0.0124 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 67 A, 100 V, 0.0124 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 67 A, 100 V, 0.0124 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 67 A, 100 V, 0.0124 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 67 A, 100 V, 0.0124 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 3 | 3 |
| 表面贴装 | YES | Yes | YES | NO | NO |
| 端子形式 | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 |
| 厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 零件包装代码 | D2PAK | - | TO-252AA | TO-262AA | TO-220AB |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | - | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | GREEN, PLASTIC, TO-220, 3 PIN |
| 针数 | 4 | - | 4 | 3 | 3 |
| Reach Compliance Code | compli | - | compli | compli | compli |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 其他特性 | FAST SWITCHING | - | FAST SWITCHING | FAST SWITCHING | FAST SWITCHING |
| 雪崩能效等级（Eas） | 154 mJ | - | 154 mJ | 154 mJ | 154 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | - | 100 V | 100 V | 100 V |
| 最大漏极电流 (Abs) (ID) | 67 A | - | 67 A | 67 A | 67 A |
| 最大漏极电流 (ID) | 67 A | - | 67 A | 67 A | 67 A |
| 最大漏源导通电阻 | 0.0126 Ω | - | 0.0124 Ω | 0.0129 Ω | 0.0129 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | - | TO-252AA | TO-262AA | TO-220AB |
| JESD-30 代码 | R-PSSO-G2 | - | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 |
| JESD-609代码 | e3 | - | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | - | 3 | 1 | 1 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | - | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | IN-LINE | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | 260 | 260 | 260 |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 125 W | - | 125 W | 125 W | 125 W |
| 最大脉冲漏极电流 (IDM) | 268 A | - | 268 A | 268 A | 268 A |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 端子面层 | Matte Tin (Sn) | - | MATTE TIN | MATTE TIN | MATTE TIN |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | 40 | 40 | NOT SPECIFIED |
微控制器 MCU
嵌入式系统
工控电子
stm32/stm8
嵌入式系统
FPGA/CPLD