IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
"%&$!"#
3 Power-Transistor
Features
Q #451<6 B 78 65AE5>3 I C D89
? 89 B
G9 >7
3
Q ( @D J54 D 8>? < 7I 6 B 3 ? >F D C
9
=9
53
?
?
5B
5B
Q H3 5<5>D 5 3 81B HR
9H"[Z#
@B 4E3 D ( &
< 71D
75
?
Q' 3 81>>5< >? B < 5<
=1< 5F
1<
5C 54
Q) 2 655 @< 9 + ? " , 3 ? =@<1>D
B
1D
>7
9
Q* E1<654 13 3 ? B >7 D $
9
9
49 ?
)#
™
Product Summary
V
9H
R
, ? >=1H, &
I
9
0(
)+&.
,-
J
Y"
6
6 B 1B 1@@<3 1D >C
? D 75D
9 9
?
Q" 1< 75> 655 13 3 ? B >7 D #
?
B
49 ?
Type
Package
Marking
E=%ID%**(%+
)+1C(0C
E=%ID%*.*%+
)+1C(0C
E=%ID%*.+%+
)+.C(0C
Maximum ratings,
1D
V
T E>< C ? D G95 C 954
T
5C 85B C @53 6
9
Parameter
? >D EC 4B > 3 EB5>D
9
>E?
19
B
Symbol Conditions
I
9
T
8
T
T
8
) E< 54 4B > 3 EB5>D
C
19
B
*#
F 1>3 85 5>5B C>7< @E< 5
+#
1<
7I 9 5
C
!1D C EB5 F <175
5 ? 3
? D
) ? G5B C 9 9 >
49C@1D
?
( @5B 9 1>4 C ? B D
1D
>7
D 175 5=@5B EB
1D 5
# 3 <=1D 3 1D B #' #
9 9
3
57? I
)#
*#
Value
,-
+1
)0(
-(
q*(
Unit
6
I
9$\aX_Q
E
6H
V
=H
P
`[`
T
V
T
_`S
T
8
T
I
9
R
=H
"
Y@
J
K
T
T
8
T
/1
, 55 67EB 6 B B 45D < 9 ? B 9 >
9 5 ? =? 5
19 >6 =1D
54
?
+#
, 55 67EB
6 B B 45D < 9 ? B 9 >
9 5
? =? 5
19 >6 =1D
54
?
+ 5F
@175
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Parameter
Symbol Conditions
min.
Thermal characteristics
-85B B 9D 5 :E>3 D > 3 1C
=1< 5CC 1>3
9
?
5
-85B B 9D 5
=1< 5CC 1>3
:E>3 D > 1=2 9
9
?
5>D
R
`T@8
R
`T@6
=9 =1<6 ? D 9
>9
? @B
>D
3 =
*
3 ? ? <>7 1B
,#
9
51
%
%
%
%
)&1
,(
A'K
Values
typ.
max.
Unit
Electrical characteristics,
1D
V
T E>< C ? D G95 C 954
T
5C 85B C @53 6
9
Static characteristics
B > C EB5 2 B
19 ? 3
51;4? G> F <175
? D
!1D D 5C < F <175
5 8B 8? 4 ? D
05B 71D F <175 4B > 3 EB5>D
?
5 ? D
19
B
V
"7G#9HH
V
=H
I
9
=
V
=H"`T#
I
9HH
V
9H
4V
=H
I
9
V
V
9H
V
=H
T
V
T
V
9H
V
=H
T
V
T
!1D ? EB5 <
5 C 3 51;175 3 EB5>D
B
B > C EB5 ? > C 1D B 9D 5
19 ? 3
D 5 5CC 1>3
I
=HH
R
9H"[Z#
V
=H
V
9H
V
=H
I
9
V
=H
.
I
9
B > C EB5 ? > C 1D B 9D 5
19 ? 3
D 5 5CC 1>3
R
9H"[Z#
V
=H
I
9
"HB9#
V
=H
.
I
9
"HB9#
!1D B 9D 5
5 5CC 1>3
I^MZ_O[ZPaO`MZOQ
R
=
g
R_
gV
9H
g5*gI
9
gR
9H"[Z#YMd
I
9
0(
*
%
%
*&0
(&)
%
+&-
)
r6
J
%
%
%
%
%
)(
)
))&0
).&(
))&-
)((
)((
)+&1
*.
)+&.
Z6
Y"
%
%
*,
).&(
*
,0
*.&(
%
%
"
H
,#
5F3 5 ? >
== H
== H
== 5@? HI )
9
3 ? >>53 D >
) 9 F D 1<9 C 9 19
9
?
C 5B3
9 > D< B
<
+ G9 3 =
*
? >5 <
D
8
1I5B
V = D 3 ; 3 ? @@5B 51 6 B 19
89
1B ? 4B >
+ 5F
@175
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
#>@ED 1@13 9 5
3
D
1>3
( ED 3 1@13 9 5
@ED
D
1>3
+ 5F C D1>C 5B 1@13 9 5
5B5 B 6 3
D
1>3
-EB > 45< D
> ?
1I 9
=5
+ 95 D
C 9
=5
-EB 6 45< D
> ? 6 1I 9
=5
1< D
<9
=5
!1D 81B 81B D 9D C
-#
5
S5
13 5B 9
C3
!1D D C EB5 3 81B
5 ? ? 3
75
!1D D 4B > 3 81B
5 ? 19
75
, G9 89 3 81B
D >7
3
75
!1D 3 81B D D
5
75 ? 1<
!1D @< 51E F <175
5 1D
? D
( ED 3 81B
@ED
75
Reverse Diode
9 45 3 ? >D EC 6 B 4 3 EB5>D
?
9
>?
? G1B
B
9 45 @E< 5 3 EB5>D
?
C
B
9 45 6 B 4 F <175
?
? G1B ? D
+ 5F C B ? F I D
5B5 53 5B 9
=5
+ 5F C B ? F I 3 81B
5B5 53 5B
75
-#
Values
typ.
max.
Unit
C
U__
C
[__
C
^__
t
P"[Z#
t
^
t
P"[RR#
t
R
V
99
V
=H
I
9
R
=
"
V
=H
V
9H
f
& " J
%
%
%
%
%
%
%
)+((
+-+
)-
)*
+-
)0
-
)/+(
,.1
%
%
%
%
%
\<
Z_
Q
S_
Q
SP
Q
_c
Q
S
V
\XM`QMa
Q
[__
V
99
V
=H
V
99
I
9
V
=H
?
%
%
%
%
%
%
/
,
0
)1
-&-
*-
%
%
%
*-
%
+,
Z8
J
Z8
I
H
I
H$\aX_Q
V
H9
t
^^
Q
^^
%
T
8
T
%
V
=H
I
<
T
V
T
V
G
I
<
4I
H
Pi
<
'Pt
%
%
%
%
%
)&(
-(
/,
,-
)0(
)&*
%
%
6
J
Z_
Z8
, 55 67EB
6 B 5 3 81B @1B
9 5
? 71D
75
1=5D 456>9? >
5B 9 D
9
+ 5F
@175
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
1 Power dissipation
P
`[`
4R"T
8
#
2 Drain current
I
9
4R"T
8
V
=H
"
80
50
40
60
30
P
tot
[W]
40
I
D
[A]
20
10
0
0
50
100
150
200
0
50
100
150
200
20
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
9
4R"V
9H
T
8
T
D
4(
@1B
1=5D
t
\
5B
10
3
4 Max. transient thermal impedance
Z
`T@8
4R"t
\
#
@1B
1=5D
D
4t
\
'T
5B
10
1
<=9 2 I ? > C 1D
9 D
54
D5
^Q_U_`MZOQ
VC
10
2
10
0
(&-
Z
thJC
[K/W]
I
D
[A]
(&*
(&)
(&(-
(&(*
=C
10
1
10
-1
(&()
C>7< @E< 5
9 5
C
98
10
0
10
-1
10
0
10
1
10
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
+ 5F
@175
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
5 Typ. output characteristics
I
9
4R"V
9H
T
V
T
@1B
1=5D
V
=H
5B
150
.
.
.
.
.
6 Typ. drain-source on resistance
R
9H"[Z#
4R"I
9
T
V
T
@1B
1=5D
V
=H
5B
30
.
100
.
20
R
DS(on)
[m ]
I
D
[A]
.
.
.
50
.
10
.
.
0
0
1
2
3
4
5
0
0
40
80
120
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
9
4R"V
=H
K
9H
g5*gI
9
gR
9H"[Z#YMd
V
@1B
1=5D
T
V
5B
120
8 Typ. forward transconductance
g
R_
4R"I
9
T
V
T
80
60
80
g
fs
[S]
40
T
T
I
D
[A]
40
20
0
0
2
4
6
8
0
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
+ 5F
@175
工控电子
