首页 > 器件类别 > 分立半导体 > 晶体管

IPB60R360P7ATMA1

MOSFET TO263-3

器件类别:分立半导体    晶体管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

下载文档
IPB60R360P7ATMA1 在线购买

供应商:

器件:IPB60R360P7ATMA1

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
1 week
雪崩能效等级(Eas)
27 mJ
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
600 V
最大漏源导通电阻
0.36 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
26 A
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
Product brief
600 V CoolMOS™ P7 SJ MOSFET
Power MOSFET with optimized balance of
ease-of-use and highest energy efficiency
The 600 V CoolMOS™ P7 is the successor of the 600 V CoolMOS™ P6 series targeting a
broad range of applications ranging from low power SMPS up to highest power levels.
The 600 V CoolMOS™ P7 is Infineon’s most well-balanced CoolMOS™ technology in terms
of combining ease-of-use (e.g. low ringing) with excellent efficiency performance and
reasonable price.
600 V CoolMOS™ P7 achieves up to 1.5 percent better efficiency and 4.2°C lower MOSFET
temperature versus competitor offerings. Its gate charge Q
g
and E
oss
are 30 – 60 percent
lower compared to previous CoolMOS™ families and competition, which leads to
reduced driving and switching losses that allow high efficiency in various power classes.
Furthermore, the optimized R
DS(on)
enables smaller footprints and higher power density.
Key features
Outstanding commutation
150 W TV power supply
Delta e iciency @ 90 V
AC
0.0
-0.2
E iciency [%]
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
0
20
IPA60R360P7
40
60
Load current [%]
Competitor A
Delta e iciency 600 W LLC B3
Optimized deadtime with bias
0.0
-0.1
0.29 %
E iciency [%]
-0.2
-0.3
-0.4
-0.5
0
10
20
30
IPA60R180P7
40
50
60
Load current [%]
Competitor A
70
Competitor B
80
90
100
0.15%
Competitor B
80
100
1.5 %
0.2%
ruggedness
Optimized balance between
efficiency and ease-of-use
Significant reduction of switching
and conduction losses
Excellent ESD robustness > 2 kV
(HBM) for all products
Better R
DS(on)
/package products
compared to competition enabled by
a low R
DS(on)
x A (below 1 Ω x mm²)
Large portfolio with granular R
DS(on)
selection qualified for a variety of
industrial and consumer applications
Key benefits
Suitable for hard and soft switching
(PFC and LLC)
Ease-of-use and fast design-in
through low ringing tendency and
usage across PFC and PWM stages
Simplified thermal management
due to low switching and conduction
losses
Higher manufacturing quality due to
> 2 kV ESD protection
Increased power density solutions
enabled by using products with
smaller footprint
Suitable for a wide variety of
applications and power ranges
www.infineon.com/p7-600v
Product brief
The excellent ease-of-use level of the 600 V CoolMOS™ P7 results from carefully selected integrated gate resistors. In addition,
600 V CoolMOS™ P7 comes along with an outstanding body diode ruggedness which makes it the perfect fit for hard and soft switching
applications. Finally, the 600 V CoolMOS™ P7 offers an excellent ESD robustness of > 2 kV (HBM) over the whole portfolio in order to
improve our customers’ assembly yield. For products with R
DS(on)
values higher than 100 mΩ the high ESD level is guaranteed by an
integrated Zener diode.
Challenges in PFC:
V
GS
out of spec
High switching loss
High device stress
CoolMOS™ P7 optimized for
improved oscillation
C
par
Challenges in LLC:
Body diode hard commutation
High voltage overshoot
High current spike
High device stress
CoolMOS™ P7 with good
commutation ruggedness
V
DS
Oscillation
due to dv/dt
C
gd
C
ds
C
gs
L
par
D
R
g, ext
G
R
g
Challenges from fast
switching:
EMI and oscillations from
high di/dt
CoolMOS™ P7 with good
controllability for ease-of-use
Oscillation due to di/dt
L
source
S
Challenges in ESD
Protecting device from electro
static discharge damage in
manufacturing
CoolMOS™ P7 offers an
excellent ESD capability
The wide variety of R
DS(on)
from 37 mΩ to 600 mΩ in both through-hole and surface mount (SMD) packages makes 600 V CoolMOS
TM
P7
suitable for applications such as lighting, TV sets, notebook adapters, PC power, solar inverters, servers, telecom rectifiers and for EV
charging. For the first time products are qualified for standard and industrial grade allowing the customer to choose the correct type for
the application requirements.
Product portfolio 600 V CoolMOS™ P7
Industrial grade
R
DS(on)
[mΩ]
max.
600
360/365
280/285
180/185
120/125
99/105
80
60/65
37
600
360
280
180
DPAK
IPD60R600P7
IPD60R360P7
IPD60R280P7
IPD60R180P7
D
2
PAK
ThinPAK 8x8
TO-220 FullPAK
IPA60R600P7
IPA60R360P7
IPA60R280P7
IPA60R180P7
IPA60R120P7
IPA60R099P7
IPA60R080P7
IPA60R060P7
TO-220
IPP60R600P7
IPP60R360P7
IPP60R280P7
IPP60R180P7
IPP60R120P7
IPP60R099P7
IPP60R080P7
IPP60R060P7
TO-220 FullPAK
Wide Creepage
TO-247
TO-247 4pin
SOT-223
IPB60R360P7
IPB60R280P7
IPB60R180P7
IPB60R120P7
IPB60R099P7
IPB60R080P7
IPB60R060P7
IPL60R365P7
IPL60R285P7
IPL60R185P7
IPL60R125P7
IPL60R105P7
IPL60R085P7
IPL60R065P7
IPW60R180P7
IPW60R120P7
IPW60R099P7
IPW60R080P7
IPW60R060P7
IPW60R037P7
IPAW60R600P7S
IPAW60R360P7S
IPAW60R280P7S
IPAW60R180P7S
IPZA60R180P7
IPZA60R120P7
IPZA60R099P7
IPZA60R080P7
IPZA60R060P7
IPZA60R037P7
IPN60R600P7S
IPN60R360P7S
IPD60R600P7S
IPD60R360P7S
IPD60R280P7S
IPD60R180P7S
Standard grade
IPA60R600P7S
IPA60R360P7S
IPA60R280P7S
IPA60R180P7S
* Further portfolio extension planned in Q1 CY 2019
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2017 Infineon Technologies AG.
All Rights Reserved.
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE
THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED
APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.
Additional information
For further information on technologies, our products, the
application of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
office (www.infineon.com).
Warnings
Due to technical requirements, our products may contain
dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any life-
endangering applications, including but not limited to medical,
nuclear, military, life-critical or any other applications where a
failure of the product or any consequences of the use thereof can
result in personal injury.
Order Number:
B152-I0565-V3-7600-EU-EC
Date: 12 / 2017
查看更多>
参数对比
与IPB60R360P7ATMA1相近的元器件有:IPB60R280P7ATMA1。描述及对比如下:
型号 IPB60R360P7ATMA1 IPB60R280P7ATMA1
描述 MOSFET TO263-3 MOSFET TO263-3
是否Rohs认证 符合 符合
厂商名称 Infineon(英飞凌) Infineon(英飞凌)
包装说明 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 1 week 1 week
雪崩能效等级(Eas) 27 mJ 38 mJ
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 600 V 600 V
最大漏源导通电阻 0.36 Ω 0.28 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-263AB TO-263AB
JESD-30 代码 R-PSSO-G2 R-PSSO-G2
元件数量 1 1
端子数量 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最低工作温度 -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 26 A 36 A
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消