IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
OptiMOS
®
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
3.7
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• Green product (RoHS compliant)
Type
IPB80N04S2-H4
IPP80N04S2-H4
IPI80N04S2-0H4
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Marking
2N04H4
2N04H4
2N04H4
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=80A
Value
80
80
320
660
±20
300
-55 ... +175
55/175/56
mJ
V
W
°C
Unit
A
Rev. 1.1
page 1
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=80 A
V
GS
=10 V,
I
D
=80 A,
SMD version
40
2.1
-
3.0
-
4.0
V
-
-
-
-
-
-
-
-
0.5
62
62
40
K/W
Values
typ.
max.
Unit
Zero gate voltage drain current
I
DSS
-
0.01
1
µA
-
-
-
-
1
1
3.5
3.2
100
100
4.0
3.7
nA
mΩ
Rev. 1.1
page 2
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
0.9
80
320
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32 V,
I
D
=80 A,
V
GS
=0 to 10 V
-
-
-
-
21
38
103
4.9
29
70
148
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=1.3
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
4400
1800
480
23
63
46
22
-
-
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
2)
t
rr
-
195
-
ns
Reverse recovery charge
2)
1)
Q
rr
-
370
-
nC
Current is limited by bondwire; with an
R
thJC
= 0.5K/W the chip is able to carry 200A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
2)
3)
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
10 V
350
100
300
80
250
60
P
tot
[W]
200
150
I
D
[A]
40
20
0
0
50
100
150
200
0
50
100
150
200
100
50
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
0
10 µs
0.5
100 µs
100
1 ms
10
-1
0.1
Z
thJC
[K/W]
I
D
[A]
0.05
10
10
-2
0.01
single pulse
1
0.1
1
10
-3
V
DS
[V]
10
100
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
Rev. 1.1
page 4
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
300
10 V
7V
6.5 V
5.5 V
6V
6 Typ. drain-source on-state resistance
R
DS(on)
= (I
D
);
T
j
= 25 °C
parameter:
V
GS
18
250
6V
6.5 V
200
14
150
5.5 V
R
DS(on)
[mW]
I
D
[A]
10
100
5V
6
50
7V
10 V
0
0
2
4
6
8
10
2
0
80
160
I
D
[A]
240
320
V
DS
[V]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
320
280
240
200
160
120
80
40
0
2
3
4
5
6
7
175 °C
25 °C
-55 °C
8 Typ. Forward transconductance
g
fs
= f(I
D
);
T
j
= 25°C
parameter:
g
fs
200
175
150
125
g
fs
[S]
I
D
[A]
100
75
50
25
0
0
50
100
150
V
GS
[V]
I
D
[A]
Rev. 1.1
page 5
2008-02-22
