型号
- 型号
- 关键词
| 型号 | IPB80N06S4L-05 | IPI80N06S4L05AKSA1 | IPP80N06S4L05AKSA1 |
|---|---|---|---|
| 描述 | Fixed Inductors XAL4030 AEC-Q200 4.7 uH 20 % 5.1 A | MOSFET N-CHANNEL_55/60V | MOSFET N-CHANNEL_55/60V |
| 是否Rohs认证 | 符合 | 符合 | 符合 |
| 包装说明 | GREEN, PLASTIC, TO-263, 3 PIN | GREEN, PLASTIC, TO-262, 3 PIN | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | not_compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 152 mJ | 152 mJ | 152 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 80 A | 80 A | 80 A |
| 最大漏源导通电阻 | 0.0048 Ω | 0.0048 Ω | 0.0048 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-262AA | TO-220AB |
| JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 320 A | 320 A | 320 A |
| 表面贴装 | YES | NO | NO |
| 端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) |
| Factory Lead Time | - | 1 week | 1 week |
| Base Number Matches | - | 1 | 1 |
