IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
OptiMOS
™
2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB26CN10N G
IPD25CN10N G
IPI26CN10N G
IPP26CN10N G
Product Summary
V
DS
R
DS(on),max (TO252)
I
D
100
25
35
V
mW
A
Package
Marking
PG-TO263-3
26CN10N
PG-TO252-3
25CN10N
PG-TO262-3
26CN10N
PG-TO220-3
26CN10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
35
25
140
65
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=35 A,
R
GS
=25
W
I
D
=35 A,
V
DS
=80 V,
di /dt =100 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
71
-55 ... 175
55/175/56
J-STD20 and JESD22
see figure 3
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.09
page 1
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO252, TO251)
R
thJC
R
thJA
minimal footprint
6 cm2 cooling area
4)
minimal footprint
6 cm2 cooling area
4)
-
-
-
-
-
-
-
-
-
-
2.1
62
40
75
50
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=39 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=35 A,
(TO252)
V
GS
=10 V,
I
D
=35 A,
(TO251)
V
GS
=10 V,
I
D
=35 A,
(TO263)
V
GS
=10 V,
I
D
=35 A,
(TO220, TO262)
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=35 A
100
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
10
1
19
100
100
25
nA
mW
-
19
25
-
20
26
-
-
19
20
1.1
38
26
-
-
W
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Rev. 1.09
page 2
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=35 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
-
-
-
-
-
-
1560
232
16
10
4
13
3
2070
309
24
15
6
19
4
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=50 V,
V
GS
=0 V
V
DD
=50 V,
I
D
=35 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
9
6
10
23
5.6
24
12
8
14
31
-
32
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=35 A,
T
j
=25 °C
V
R
=50 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
1
85
165
35
140
1.2
A
V
ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.09
page 3
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
80
40
70
35
60
30
50
25
P
tot
[W]
40
I
D
[A]
0
50
100
150
200
20
30
15
20
10
10
5
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1 µs
10
2
10 µs
100 µs
Z
thJC
[K/W]
I
D
[A]
10
1
1 ms
1
0.5
0.2
10 ms
DC
0.05
10
0
0.1
0.02
10
-1
10
-1
10
0
10
1
10
2
10
3
0.1
0.01
V
DS
[V]
single pulse
t
p
[s]
Rev. 1.09
page 4
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
100
10 V
8V
7V
5V
5.5 V
6V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
60
50
80
6.5 V
40
R
DS(on)
[mW]
60
6.5 V
I
D
[A]
30
7V
8V
6V
40
20
5.5 V
10 V
20
10
5V
4.5 V
0
0
1
2
3
4
5
0
0
10
20
30
40
50
60
70
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
80
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
40
35
60
30
25
40
g
fs
[S]
175 °C
25 °C
I
D
[A]
20
15
20
10
5
0
0
2
4
6
8
0
0
10
20
30
V
GS
[V]
I
D
[A]
Rev. 1.09
page 5
2013-07-09
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