IPG20N04S4-08
OptiMOS™-T2 Power-Transistor
Product Summary
V
DS
R
DS(on),max4)
I
D
40
7.6
20
V
mW
A
Features
• Dual N-channel Normal Level - Enhancement mode
PG-TDSON-8-4
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
IPG20N04S4-08
Package
PG-TDSON-8-4
Marking
4N0408
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
one channel active
Symbol
Conditions
T
C
=25 °C,
V
GS
=10 V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
one channel active
Avalanche energy, single pulse
2, 4)
Avalanche current, single pulse
4)
Gate source voltage
Power dissipation
one channel active
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
I
D
=10A
-
-
T
C
=25 °C
-
Value
Unit
I
D
20
A
20
80
230
15
±20
65
-55 ... +175
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-10-05
IPG20N04S4-08
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
4)
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
= 30µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=18 V,
V
GS
=0 V,
T
j
=85 °C
2)
Gate-source leakage current
4)
Drain-source on-state resistance
4)
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=17 A
40
2.0
-
-
3.0
0.01
-
4.0
1
µA
V
-
-
-
-
100
60
2.3
-
-
K/W
-
-
-
1
-
7.0
100
100
7.6
nA
mW
Rev. 1.0
page 2
2010-10-05
IPG20N04S4-08
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
4)
Output capacitance
4)
Reverse transfer capacitance
4)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2, 4)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
one channel active
Diode pulse current
2)
one channel active
Diode forward voltage
I
S
T
C
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=17 A,
T
j
=25 °C
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
80
-
-
20
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32 V,
I
D
=20 A,
V
GS
=0 to 10 V
-
-
-
-
12
4
28
5.2
15
9
36
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=11
W
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
2260
555
17
15
5
20
13
2940
720
39
-
-
-
-
ns
pF
V
SD
-
0.9
1.3
V
Reverse recovery time
2)
t
rr
-
36
-
ns
Reverse recovery charge
2, 4)
1)
Q
rr
-
34
-
nC
Current is limited by bondwire; with an
R
thJC
=2.3 K/W the chip is able to carry 71A at 25°C.
Specified by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Per channel
Rev. 1.0
page 3
2010-10-05
IPG20N04S4-08
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥ 6 V; one channel active
2 Drain current
I
D
= f(T
C
);
V
GS
≥ 6 V; one channel active
70
25
60
20
50
15
P
tot
[W]
40
30
I
D
[A]
10
20
5
10
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25°C;
D
=0; one channel active
parameter:
t
p
100
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
100 µs
10
10
0
0.5
Z
thJC
[K/W]
I
D
[A]
0.1
0.05
1 ms
1
10
-1
0.01
single pulse
0.1
0.1
1
10
100
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2010-10-05
IPG20N04S4-08
5 Typ. output characteristics
4)
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
80
10 V
6.5 V
6.25 V
6 Typ. drain-source on-state resistance
4)
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
45
5V
5.5 V
6V
6V
60
35
40
R
DS(on)
[mW]
I
D
[A]
5.5 V
25
20
5V
15
6.5 V
10 V
0
0
2
4
6
8
5
0
20
40
60
80
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
4)
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
80
8 Typ. drain-source on-state resistance
4)
R
DS(on)
= f(T
j
);
I
D
= 17 A;
V
GS
= 10 V
12
60
10
40
R
DS(on)
[m
W
]
175 °C
25 °C
-55 °C
I
D
[A]
8
20
6
0
3
4
5
6
7
4
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2010-10-05
