IPG20N06S2L-65A
OptiMOS
®
Power-Transistor
Product Summary
V
DS
R
DS(on),max3)
I
D
55
65
20
V
mΩ
A
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
PG-TDSON-8-10
Type
IPG20N06S2L-65A
Package
PG-TDSON-8-10
Marking
2N06L65
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
one channel active
1)
Symbol
Conditions
T
C
=25 °C,
V
GS
=10 V
Value
Unit
I
D
20
A
T
C
=100 °C,
V
GS
=10 V
Pulsed drain current
1)
one channel active
Avalanche energy, single pulse
1, 3)
Avalanche current, single pulse
3)
Gate source voltage
Power dissipation
one channel active
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
14
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
-
I
D
=10A
-
-
T
C
=25 °C
-
-
80
40
15
±20
43
-55 ... +175
55/175/56
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-02-28
IPG20N06S2L-65A
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
1)
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
-
minimal footprint
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
3)
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=14 µA
V
DS
=55 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=55 V,
V
GS
=0 V,
T
j
=125 °C
2)
Gate-source leakage current
3)
Drain-source on-state resistance
3)
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=7.5A
V
GS
=10 V,
I
D
=15A
55
1.2
-
-
1.6
0.01
-
2.0
1
µA
V
-
-
-
-
100
60
3.5
-
-
K/W
-
-
-
-
1
1
67
53
100
100
79
65
nA
mΩ
Rev. 1.0
page 2
2013-02-28
IPG20N06S2L-65A
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
1)
Input capacitance
3)
Output capacitance
3)
Reverse transfer capacitance
3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
1, 3)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
1)
one channel active
Diode pulse current
1)
one channel active
Diode forward voltage
I
S
T
C
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=15 A,
T
j
=25 °C
V
R
=27.5 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
80
-
-
20
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=44 V,
I
D
=20 A,
V
GS
=0 to 10 V
-
-
-
-
1.2
3.5
9.4
3.9
1.6
5.3
12
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=27.5 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=11
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
315
90
35
2
3
10
7
410
120
50
-
-
-
-
ns
pF
V
SD
-
1.0
1.3
V
Reverse recovery time
1)
t
rr
-
30
-
ns
Reverse recovery charge
1, 3)
Q
rr
-
28
-
nC
1)
2)
Specified by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Per channel
Rev. 1.0
page 3
2013-02-28
IPG20N06S2L-65A
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V; one channel active
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V; one channel active
45
40
35
30
25
20
15
P
tot
[W]
20
15
10
5
0
0
50
100
150
200
I
D
[A]
10
5
0
0
50
100
150
200
25
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25°C;
D
=0; one channel active
parameter:
t
p
100
1 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
10 µs
0.5
10
0
Z
thJC
[K/W]
I
D
[A]
0.1
0.05
10
100 µs
10
-1
0.01
1 ms
single pulse
1
1
10
100
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2013-02-28
IPG20N06S2L-65A
5 Typ. output characteristics
3)
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
80
10 V
6 Typ. drain-source on-state resistance
3)
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
160
3.5 V
4V
4.5 V
5V
5.5 V
140
60
120
40
4.5 V
R
DS(on)
[mΩ]
5V
I
D
[A]
100
80
20
4V
60
3.5 V
3V
10 V
0
0
1
2
3
4
5
40
0
20
40
60
80
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
3)
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
80
-55 °C
25 °C
8 Typ. drain-source on-state resistance
3)
R
DS(on)
= f(T
j
);
I
D
= 15 A;
V
GS
= 10 V
120
100
60
I
D
[A]
175 °C
40
R
DS(on)
[mΩ]
7
80
60
20
40
0
1
3
5
20
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2013-02-28
