70 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
70 A, 80 V, 0.01 ohm, N沟道, 硅, POWER, 场效应管, TO-220AB
厂商名称:Infineon(英飞凌)
器件标准:
下载文档型号 | IPI100N08N3G | IPB097N08N3G | IPP100N08N3G |
---|---|---|---|
描述 | 70 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 70 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 70 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
是否Rohs认证 | 符合 | 符合 | 符合 |
零件包装代码 | TO-262AA | D2PAK | TO-220AB |
包装说明 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | GREEN, PLASTIC, TO-220, 3 PIN |
针数 | 3 | 4 | 3 |
Reach Compliance Code | compli | compliant | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 90 mJ | 90 mJ | 90 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 80 V | 80 V | 80 V |
最大漏极电流 (Abs) (ID) | 70 A | 70 A | 70 A |
最大漏极电流 (ID) | 70 A | 70 A | 70 A |
最大漏源导通电阻 | 0.01 Ω | 0.0097 Ω | 0.01 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-262AA | TO-263AB | TO-220AB |
JESD-30 代码 | R-PSIP-T3 | R-PSSO-G2 | R-PSFM-T3 |
JESD-609代码 | e3 | e3 | e3 |
湿度敏感等级 | 1 | 1 | 1 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 2 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | SMALL OUTLINE | FLANGE MOUNT |
峰值回流温度(摄氏度) | 260 | 260 | 260 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 100 W | 100 W | 100 W |
最大脉冲漏极电流 (IDM) | 280 A | 280 A | 280 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | YES | NO |
端子面层 | MATTE TIN | MATTE TIN | Matte Tin (Sn) |
端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 40 | 40 | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | - |
是否无铅 | - | 不含铅 | 不含铅 |