IPB80N06S4-05
IPI80N06S4-05, IPP80N06S4-05
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
60
5.4
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB80N06S4-05
IPI80N06S4-05
IPP80N06S4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0605
4N0605
4N0605
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
1)
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=40A
-
-
T
C
=25°C
-
-
Value
80
75
320
152
80
±20
107
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2009-03-24
IPB80N06S4-05
IPI80N06S4-05, IPP80N06S4-05
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
-
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=60µA
V
DS
=60V,
V
GS
=0V
V
DS
=60V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=80A
V
GS
=10V,
I
D
=80A,
SMD version
60
2.0
-
-
-
-
-
-
3.0
0.01
5
-
4.7
4.4
-
4.0
1
100
100
5.7
5.4
nA
mΩ
µA
V
-
-
-
-
-
-
-
-
1.4
62
62
40
K/W
Values
typ.
max.
Unit
Rev. 1.0
page 2
2009-03-24
IPB80N06S4-05
IPI80N06S4-05, IPP80N06S4-05
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25°C
V
GS
=0V,
I
F
=80A,
T
j
=25°C
V
R
=30V,
I
F
=80A,
di
F
/dt =100A/µs
-
-
0.6
-
-
0.95
80
320
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48V,
I
D
=80A,
V
GS
=0 to 10V
-
-
-
-
28
7
62
5.6
36
14
81
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30V,
V
GS
=10V,
I
D
=80A,
R
G
=3.5Ω
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
5000
1230
50
20
5
35
8
6500
1600
100
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
2)
t
rr
-
36
-
ns
Reverse recovery charge
2)
1)
Q
rr
-
41
-
nC
Current is limited by bondwire; with an
R
thJC
= 1.4K/W the chip is able to carry 106A at 25°C.
Specified by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
IPB80N06S4-05
IPI80N06S4-05, IPP80N06S4-05
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V; SMD
120
100
100
80
80
60
P
tot
[W]
60
I
D
[A]
40
20
0
0
50
100
150
200
0
50
100
150
200
40
20
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
0
0.5
100
100 µs
Z
thJC
[K/W]
0.1
I
D
[A]
10
-1
0.05
0.01
10
1 ms
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2009-03-24
IPB80N06S4-05
IPI80N06S4-05, IPP80N06S4-05
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
320
10 V
8V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
15
5V
6V
7V
280
7V
13
240
200
160
120
80
40
0
0
1
2
3
4
5
6
5
5V
6V
11
R
DS(on)
[mΩ]
I
D
[A]
9
7
8V
10 V
3
0
80
160
240
320
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
320
-55 °C
25 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 80 A;
V
GS
= 10 V; SMD
8
7.5
7
280
240
200
175 °C
6.5
R
DS(on)
[m
Ω
]
2
3
4
5
6
7
8
6
5.5
5
4.5
4
I
D
[A]
160
120
80
40
3.5
0
3
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2009-03-24
