IPI90R800C3
CoolMOS
™
Power Transistor
Features
• Lowest figure-of-merit R
ON
x Q
g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
V
DS
@
T
J
=25°C
R
DS(on),max
@
T
J
= 25°C
Q
g,typ
900
0.8
42
V
Ω
nC
PG-TO262
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPI90R800C3
Package
PG-TO262
Marking
9R800C
Maximum ratings,
at
T
J
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P
tot
T
J
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=1.4 A,
V
DD
=50 V
I
D
=1.4 A,
V
DD
=50 V
Value
6.9
4.4
15
157
0.46
1.4
50
±20
±30
104
-55 ... 150
W
°C
A
V/ns
V
mJ
Unit
A
Rev. 1.0
page 1
2008-07-30
IPI90R800C3
Maximum ratings,
at
T
J
=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv /dt
4)
Symbol Conditions
I
S
I
S,pulse
dv /dt
T
C
=25 °C
Value
4.1
15
4
V/ns
Unit
A
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at leads
R
thJC
R
thJA
leaded
1.6 mm (0.063 in.)
from case for 10 s
-
-
-
-
1.2
62
K/W
T
sold
-
-
260
°C
Electrical characteristics,
at
T
J
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=0.46 mA
V
DS
=900 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=900 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=4.1 A,
T
j
=25 °C
V
GS
=10 V,
I
D
=4.1 A,
T
j
=150 °C
Gate resistance
R
G
f
=1 MHz, open drain
900
2.5
-
-
3
-
-
3.5
1
µA
V
-
-
-
10
-
0.62
-
100
0.8
nA
Ω
-
-
1.7
1.3
-
-
Ω
Rev. 1.0
page 2
2008-07-30
IPI90R800C3
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
5)
Effective output capacitance, time
related
6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
Values
typ.
max.
Unit
C
iss
C
oss
C
o(er)
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
-
-
-
1100
52
34
-
-
-
pF
V
GS
=0 V,
V
DS
=0 V
to 500 V
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
V
DD
=400 V,
V
GS
=10 V,
I
D
=4.1 A,
R
G
=50
Ω
-
-
-
-
-
130
70
20
400
32
-
-
-
-
-
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V,
I
D
=4.1 A,
V
GS
=0 to 10 V
-
-
-
-
5
18
42
4.6
-
-
tbd
-
nC
V
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V,
I
F
=4.1 A,
T
J
=25 °C
-
-
0.8
360
5.3
24
1.2
-
-
-
V
ns
µC
A
V
R
=400 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
J-STD20 and JESD22
Pulse width
t
p
limited by
T
J,max
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=E
AR
*f.
I
SD
≤I
D
, di/dt≤ 200 A/µs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
J
<T
J,max
, identical low side and high side switch
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 50%
V
DSS.
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 50%
V
DSS.
2)
3)
4)
5)
6)
Rev. 1.0
page 3
2008-07-30
IPI90R800C3
1 Power dissipation
P
tot
=f(T
C
)
2 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
110
100
90
80
70
10
1
10 µs
100 µs
10
2
limited by on-state
resistance
1 µs
P
tot
[W]
50
40
30
20
10
0
0
25
50
75
100
125
150
I
D
[A]
60
1 ms
10 ms
DC
10
0
10
-1
1
10
100
1000
T
C
[°C]
V
DS
[V]
3 Max. transient thermal impedance
Z
thJC
=f(t
P
)
parameter:
D=t
p
/T
10
1
4 Typ. output characteristics
I
D
=f(V
DS
);
T
J
=25 °C
parameter:
V
GS
20
20 V
10 V
8V
6V
15
10
0
5.5 V
Z
thJC
[K/W]
0.5
I
D
[A]
0.2
0.1
10
5V
10
-1
0.05
0.02
0.01
single pulse
5
4.5 V
4V
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
0
0
5
10
15
20
25
t
p
[s]
V
DS
[V]
Rev. 1.0
page 4
2008-07-30
IPI90R800C3
5 Typ. output characteristics
I
D
=f(V
DS
);
T
J
=150 °C
parameter:
V
GS
10
20 V
10 V
8V
6V
5V
6 Typ. drain-source on-state resistance
R
DS(on)
=f(I
D
);
T
J
=150 °C
parameter:
V
GS
10
8
8
4.5 V
R
DS(on)
[
Ω
]
6
6
10 V
I
D
[A]
4
4V
4
5V
4.8 V
2
2
4V
4.5 V
0
0
5
10
15
20
25
0
0
2
4
6
8
10
12
14
V
DS
[V]
I
D
[A]
7 Drain-source on-state resistance
R
DS(on)
=f(T
J
);
I
D
=4.1 A;
V
GS
=10 V
8 Typ. transfer characteristics
I
D
=f(V
GS
);
V
DS
=20V
parameter:
T
J
2.5
20
25 °C
2
15
R
DS(on)
[
Ω
]
1.5
I
D
[A]
10
150 °C
1
98 %
typ
5
0.5
0
-60
-20
20
60
100
140
180
0
0
2
4
6
8
10
T
J
[°C]
V
GS
[V]
Rev. 1.0
page 5
2008-07-30
嵌入式系统
