IPP03N03LB G
OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target application
• N-channel - Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
1)
Product Summary
V
DS
R
DS(on),max
I
D
30
3.1
80
V
mΩ
A
PG-TO220-3-1
Type
IPP03N03LB G
Package
PG-TO220-3-1
Marking
03N03LB
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
80
80
320
580
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
3)
I
D
=80 A,
R
GS
=25
Ω
I
D
=80 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
150
-55 ... 175
55/175/56
J-STD20 and JESD22
Rev. 0.95
page 1
2008-05-06
IPP03N03LB G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
5)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=100 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=55 A
V
GS
=10 V,
I
D
=55 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=55 A
30
1.2
-
-
1.6
0.1
-
2
1
µA
V
-
-
-
-
-
-
1.2
62
40
K/W
Values
typ.
max.
Unit
-
-
-
-
-
10
10
3.4
2.6
0.9
134
100
100
4.2
3.1
-
-
Ω
S
nA
mΩ
2)
3)
4)
5)
Current is limited by bondwire; with an
R
thJC
=1 K/W the chip is able to carry 164 A.
See figure 3
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 0.95
page 2
2008-05-06
IPP03N03LB G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.92
78
320
1.2
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=40 A,
V
GS
=0 to 5 V
-
-
-
-
-
-
-
-
16.9
9.2
11.2
19
44
3.0
39
46
22
12.2
16.9
27
59
-
52
61
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=2.7
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
5732
2036
256
12
10
49
7.4
7624
2708
384
18
16
73
11.1
ns
pF
Values
typ.
max.
Unit
Reverse recovery charge
Q
rr
-
-
20
nC
6)
See figure 16 for gate charge parameter definition
Rev. 0.95
page 3
2008-05-06
IPP03N03LB G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
160
100
140
80
120
100
60
P
tot
[W]
80
I
D
[A]
40
20
0
0
50
100
150
200
0
50
100
150
200
60
40
20
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
limited by on-state
resistance
10 µs
1 µs
1
100 µs
0.5
100
I
D
[A]
1 ms
10 ms
Z
thJC
[K/W]
DC
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
10
0.01
1
0.1
1
10
100
0.001
10
-6
0
10
-5
0
10
-4
0
10
-3
0
10
-2
0
10
-1
0
10
0
1
V
DS
[V]
t
p
[s]
Rev. 0.95
page 4
2008-05-06
IPP03N03LB G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
140
10 V
4.1 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
25
4.5 V
3.8V
3V
3.5 V
120
20
2.8V
3.2 V
3.5 V
100
80
3.2 V
60
R
DS(on)
[m
Ω
]
15
I
D
[A]
10
40
3V
5
20
2.8 V
3.8 V
4.1 V
4.5 V
10 V
0
0
1
2
3
0
0
20
40
60
80
100
120
140
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
160
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
180
160
140
120
100
80
60
140
120
100
80
60
40
175 °C
g
fs
[S]
25 °C
I
D
[A]
40
20
0
0
1
2
3
4
5
0
20
40
60
80
20
0
V
GS
[V]
I
D
[A]
Rev. 0.95
page 5
2008-05-06
