PD -95487
AUTOMOTIVE MOSFET
Typical Applications
42 Volts Automotive Electrical Systems
Electrical Power Steering (EPS)
Integrated Starter Alternator
Lead-Free
IRF1607PbF
HEXFET
®
Power MOSFET
D
V
DSS
= 75V
G
S
Benefits
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
R
DS(on)
= 0.0075Ω
I
D
= 142A
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
®
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
142
100
570
380
2.5
± 20
1250
See Fig.12a, 12b, 15, 16
5.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
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1
06/30/04
IRF1607PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
75
–––
–––
2.0
79
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.086 ––– V/°C Reference to 25°C, I
D
= 1mA
0.00580.0075
Ω
V
GS
= 10V, I
D
= 85A
––– 4.0
V
V
DS
= 10V, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 85A
––– 20
V
DS
= 75V, V
GS
= 0V
µA
––– 250
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
––– 200
V
GS
= 20V
nA
––– -200
V
GS
= -20V
210 320
I
D
= 85A
45
68
nC V
DS
= 60V
73 110
V
GS
= 10V
22 –––
V
DD
= 38V
130 –––
I
D
= 85A
ns
84 –––
R
G
= 1.8Ω
86 –––
V
GS
= 10V
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
7750 –––
V
GS
= 0V
1230 –––
pF
V
DS
= 25V
310 –––
ƒ = 1.0MHz, See Fig. 5
5770 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
790 –––
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
1420 –––
V
GS
= 0V, V
DS
= 0V to 60V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 142
showing the
A
G
integral reverse
––– ––– 570
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 85A, V
GS
= 0V
––– 130 200
ns
T
J
= 25°C, I
F
= 85A
––– 690 1040 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
C
oss
eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Starting T
J
= 25°C, L = 0.21mH
Calculated continuous current based on maximum allowable
R
G
= 25Ω, I
AS
= 85A, V
GS
=10V (See Figure 12).
junction temperature. Package limitation current is 75A.
I
SD
≤
85A, di/dt
≤
310A/µs, V
DD
≤
V
(BR)DSS
,
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
T
J
≤
175°C
avalanche performance.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF1607PbF
1000
1000
100
I
D
, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
10
4.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
VDS, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 142A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 175
°
C
100
2.0
1.5
10
T
J
= 25
°
C
1.0
0.5
1
4.0
V DS = 25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF1607PbF
12000
20
10000
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
I
D
= 85A
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
16
Ciss
C, Capacitance(pF)
8000
Coss = C + C
ds gd
12
6000
8
4000
Coss
4
2000
Crss
0
0
100
200
FOR TEST CIRCUIT
SEE FIGURE 13
300
400
0
1
10
100
Q
G
, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
T
J
= 175
°
C
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
1000
10
100
100µsec
1
T
J
= 25
°
C
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
100
1000
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF1607PbF
160
LIMITED BY PACKAGE
V
DS
V
GS
R
D
I
D
, Drain Current (A)
120
R
G
10V
D.U.T.
+
-
V
DD
80
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
40
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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