CX
!j
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF340/3417342/343
FEATURES
• LowR
D
s(on)
• Improved Inductive ruggedness
• Fast switching times .
• Rugged polysllicon gate cell structure
• Low input capacitance
• , Extended safe operating area
• Improved high temperature reliability
• TO-3 package (Standard)
TO-3
N-CHANNEL
POWER MOSFETS
PRODUCT SUMMARY
Part Number
•
IRF340
IRF341
IRF342
IRF343
Vos
Boston)
0.550
0.560
0.800
0.800
ID
10A
10A
8.0A
8.0A
400V
350V
400V
350V
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1 )
Drain-Gate Voltage (Ros-1 .OMO)(1)
Gate-Source Voltage
Continuous Drain Current Tc-25°C
Continuous Drain Current Tc=100°C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation @ Tc=25°C
Derate above 25 "C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes, 1/8" from case for 5 seconds
Symbol
VDSS
VDQR
IRF340
400
400
IRF341
350
350
±20
IRF342
400
400
IRF343
350
350
Unit
Vdo
Vdo
Vdc
Adc,
Vos
ID
ID
IOM
IOM
PD
Tj, Tsfg
10
10
6.0
40
8.0
5.0
32
±1.6
8.0
5.0
32
e.o
40
Adc
Adc
Adc
Watts
W/°C
125
1.0
-55 to 150
300
°c
"C
T
L
Notes: (1) Tj=25«C to 150°C
(2) Pulse test: Pulse widthOOOps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF340/341/342/343
N-CHANNEL
POWER MOSFETS
ELECTRICAL CHARACTERISTICS
(T
C
°25°C unless otherwise specified)
Characteristic
Symbol Type
Milt
Typ
-
-
Max
Units
-
-
Test Conditions
V
M
=OV
lD-260fiA
VDS-VGS, lD=250(jA
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero Gate Voltage
Drain Current
BVoss
IRF340
400
IRF342
IRF341
350
IRF343
ALL
ALL
ALL
ALL
2.0
-
-
—
—
V
V
V
VoSftti)
loss
loss
loss
—
4,0
—
100
— .
-100
—
260
—
1000
-
-
nA
VQS-20V
nA
V
QS
=-20V
HA
M
A
Vos^Max. Rating, Vas=OV
Vos=Max. RatlngXO.8, Vos-OV. T
C
-12S°C
On-State Drain-Source
Current (2)
IRF340
10
IRF341
tyon)
-
-
A
VDS>lD(on]XRos(on|max., V
0
s=10V
A
IRF342
8.0
IRF343
Static Drain-Source On-State
RoSlon)
Resistance (2)
IRF342
-
0.60 0.80
IRF343
Forward Transconductance (2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
[Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain ("Miller") Charge
IRF340
-
0.30 0.55
IRF341
a
Vas-10V. I
D
=6.0A
0
git
Cfc.
Co38
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
4.0
—
—
_
-
—
—
-
-
—
-
7.0
—
a
pF
VDS>lD(on|XRDS(on)nax., b=5.0A •
1300 1600
250
50
-
—
—
_
41
450
150
35
15
90
35
60
—
-
pF
VGS-OV. Vos=25V, f= 1.0MHz
PF
ns
Cn»
td(on)
t
r
t<f(ofl|
ns
ns
ns
VoD-O.SBVoss, lo^S.OA, Zo-4.70
(MOSFET switching times are essentially
independent of operating temperature.)
tf
Q«
Q
0
,
e.o
35
O
fl
d
nC
V
OS
=10V, b"1ZA, Vos-0.8 Max. Rating
Gate charge Is essentially independent of
nC
operating temperature.)
nC
THERMAL RESISTANCE
Junctton-to-Case
Case-to-Sink
Junctton-to-Amblent
Rmjc
Rmcs
RUUA
ALL
ALL
ALL
-
-
_
-
0.1
-
1.0
K/W
K/W
Mounting surface flat, smooth, and greased
-
30
KflW Free Air Operation
Notes: (1) Tj-25°C to 150°C
(2) Pulse test: Pulse wldlhOOOjjs, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. Junction temperature
IRF340/341/342/343
N-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)
Symbol Type Win Typ
IRF340
IRF341 - -
Is
IRF342
IRF343 - -
IRF340
- -
ISM
IRF342
IRF343 - -
Max Units
10
8.0
40
32
2.0
1.9
A
A
A
A
V
V
Test Conditions
Modified MOSFET symbol
I
^-p ~\e P-N junction rectifier
"^-fj
'
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
VSD
IRF34CV
IRF341 -
IRF342 _
IRF343
-
-
Tc=25
0
C, ls=10A, V
OS
=OV
T
C
=25°C, I
S
=8.0A. V
QS
=OV
Reverse Recovery Time
tr.
ALL
ns Tj=150°C, I
F
=10A, dl
F
/dt=100A/us
- 800
-
Notes: (1) Tj=25°C to 150°C (2) Pulse test: Pulse width*300/js. Duty Cycle«2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
20
40
6O
80
100
Voi,
DRAIN TO-SOURCE
VOLTAGE (VOLTS)
Typical Output Characteristics
12O
2
V
os
, OATE-TO-SOURCE VOLTAGE (VOLTS]
Typical Transfer Characteristics
2
4
6
8
V
D
s, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Typical Saturation Characteristics
1 0 2
5
10
20
SO
100 ZOO
Vos, ORAIN-TO-SOURCE VOLTAQE (VOLTS
Maximum
Safe Operating Area
