PD- 90339G
IRF350
JANTX2N6768
JANTXV2N6768
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTORS
THRU-HOLE (TO-204AA)
Product Summary
Part Number
IRF350
400V, N-CHANNEL
REF: MIL-PRF-19500/543
BV
DSS
400V
R
DS(on)
0.300
I
D
14A
TO-3 (TO-204AA)
Description
HEXFET
®
MOSFET technology is the key to IR Hirel advanced
line of power MOSFET transistors. The efficient geometry and
unique processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with high trans
conductance; superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Features
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 10V, T
C
= 25°C
I
DM
@T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Value
14
9.0
56
150
1.2
± 20
700
14
15
4.0
-55 to + 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
I
D2
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
For footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-07-01
IRF350
JANTX2N6768/JANTXV2N6768
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
400
–––
–––
–––
2.0
–––
–––
–––
–––
52
5.0
25
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.46
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.1
2600
680
250
–––
–––
0.300
0.400
4.0
25
250
100
-100
110
18
65
35
190
170
130
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D2
= 9.0A
V
GS
= 10V, I
D1
= 14A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 320V, V
GS
= 0V
µA
V
DS
= 320V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D1
= 14A
nC
V
DS
= 200V
V
GS
= 10V
V
DD
= 200V
I
D1
= 14A
ns
R
G
= 2.35
V
GS
= 10V
Measured from Drain lead (6mm /
0.25 in from package) to Source
nH
lead (6mm/ 0.25 in from package)
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
56
1.7
1200
250
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= 14A, V
GS
= 0V
T
J
= 25°C,I
F
= 14A,V
DD
30V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
Typ.
–––
–––
Max.
0.83
30
Units
°C/W
Footnotes:
Repetitive
Rating; Pulse width limited by maximum junction temperature.
V
DD
= 50V, starting T
J
= 25°C, L= 7.14mH, Peak I
L
= 14A,
V
GS
= 10V.
I
SD
14A, di/dt
145A/µs, V
DD
400V, T
J
150°C.
Suggested R
G
=2.35
Ω
Pulse width
300 µs; Duty Cycle
2%
2
International Rectifier HiRel Products, Inc.
2019-07-01
IRF350
JANTX2N6768/JANTXV2N6768
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
Fig 5.
Typical Capacitance Vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge Vs. Gate-to-Source Voltage
2019-07-01
International Rectifier HiRel Products, Inc.
IRF350
JANTX2N6768/JANTXV2N6768
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
1600
EAS , Single Pulse Avalanche Energy (mJ)
1400
1200
1000
800
600
400
200
0
25
50
75
ID
TOP
6.3A
9.0A
BOTTOM 14A
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
International Rectifier HiRel Products, Inc.
2019-07-01
IRF350
JANTX2N6768/JANTXV2N6768
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 13a.
Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms
5
International Rectifier HiRel Products, Inc.
2019-07-01
