IRF620
IRF620FP
N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP
PowerMESH™ II Power MOSFET
General features
Type
IRF620
IRF620FP
■
■
■
■
V
DSS
(@Tjmax)
200V
200V
R
DS(on)
<0.8Ω
<0.8Ω
I
D
6A
6A
3
1
2
1
3
2
Extremely high dv/dt capability
100% avalanche tested
New high voltage benchmark
Gate charge minimized
TO-220
TO-220FP
Description
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns swithing
speed, gate charge and ruggedness.
Internal schematic diagram
Applications
■
Switching application
O
codes
Order
Part number
IRF620
IRF620FP
Marking
IRF620
IRF620
Package
TO-220
TO-220FP
Packaging
Tube
Tube
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
August 2006
Rev 6
1/14
www.st.com
14
Contents
IRF620 - IRF620FP
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
2/14
IRF620 - IRF620FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(2)
P
TOT
dv/dt
(3)
V
ISO
T
J
T
stg
Absolute maximum ratings
Value
Parameter
TO-220
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Insulation winthstand voltage (DC)
Operating junction temperature
Storage temperature
6
3.8
24
70
0.56
5
200
200
± 20
6
(1)
3.8
(1)
24
(1)
30
TO-220FP
V
V
V
A
A
A
Unit
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
≤
di/dt
≤
6A,
300A/µs,
V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Table 2.
Symbol
R
thj-case
R
thj-a
Thermal data
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance case-sink typ
O
so
b
te
le
Rthc-sink
T
l
r
P
uc
od
s)
t(
so
b
-O
te
le
r
P
--
-65 to 150
150
od
ct
u
0.24
5
2000
s)
(
W
W/°C
V/ns
V
°C
Value
Unit
TO-220
1.79
62.5
0.5
300
TO-220FP
4.17
°C/W
°C/W
°C/W
°C
Parameter
Maximum lead temperature for soldering
purpose
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
6
160
Unit
A
mJ
3/14
Electrical characteristics
IRF620 - IRF620FP
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3A
2
3
Min.
200
1
50
±
100
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
0.6
Table 5.
Symbol
g
fs
(1)
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on Delay Time
Rise Time
Test conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 3A
C
iss
C
oss
C
rss
t
d(on)
t
r
Q
g
Q
gs
Q
gd
O
so
b
te
le
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
r
P
Total gate charge
Gate-source charge
Gate-drain charge
uc
od
s)
t(
b
-O
V
DS
=25V, f=1 MHz, V
GS
=0
so
et
l
P
e
od
r
Min.
s)
t(
uc
0.8
Max.
4
Typ.
1.5
350
70
35
18
30
19
4.5
7.5
Unit
S
pF
pF
pF
ns
ns
V
DD
= 100V, I
D
= 3A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 14)
V
DD
=160V, I
D
= 6A
V
GS
=10V
27
nC
nC
nC
4/14
IRF620 - IRF620FP
Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=6A, V
GS
=0
I
SD
=6A,
di/dt = 100A/µs,
V
DD
=100V, Tj=150°C
(see Figure 16)
155
700
9
Test conditions
Min
Typ.
Max
6
24
1.5
Unit
A
A
V
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
5/14
