SMPS MOSFET
PD - 95293
IRF6216PbF
HEXFET
®
Power MOSFET
Applications
l
Reset Switch for Active Clamp Reset
DC-DC converters
l
Lead-Free
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
-150V
R
DS(on)
max
I
D
0.240
W
@V
GS
=-10V -2.2A
S
1
8
A
D
D
D
D
S
S
G
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
06/06/05
IRF6216PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
–––
–––
-3.0
–––
–––
–––
–––
Typ.
–––
-0.17
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.240
Ω
V
GS
= -10V, I
D
= -1.3A
-5.0
V
V
DS
= V
GS
, I
D
= -250µA
-25
V
DS
= -150V, V
GS
= 0V
µA
-250
V
DS
= -120V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
33
7.2
15
18
15
33
26
1280
220
53
1290
99
220
Max. Units
Conditions
–––
S
V
DS
= -50V, I
D
= -1.3A
49
I
D
= -1.3A
11
nC
V
DS
= -120V
23
V
GS
= -10V,
–––
V
DD
= -75V
–––
I
D
= -1.3A
ns
–––
R
G
= 6.5Ω
–––
V
GS
= -10V
–––
V
GS
= 0V
–––
V
DS
= -25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= -120V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to -120V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
200
-4.0
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
80
310
-2.2
A
-19
-1.6
120
460
V
nS
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.3A
di/dt = -100A/µs
D
S
2
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IRF6216PbF
100
TOP
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
100
TOP
10
-I
D
, Drain-to-Source Current (A)
BOTTOM
-I
D
, Drain-to-Source Current (A)
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
10
1
-5.0V
-5.0V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
0.01
0.1
1
10
100
20µs PULSE WIDTH
T
J
= 150
°
C
0.1
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
D
= -2.2A
2.0
10
(Normalized)
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
1.5
1.0
1
0.5
V DS -50V
=
20µs PULSE WIDTH
0.1
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V
GS
= -10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
-V
GS
Gate-to-Source Voltage (V)
,
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF6216PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
-V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
-1.3A
10
V
DS
= -120V
V
DS
= -75V
V
DS
= -30V
C, Capacitance(pF)
1000
Ciss
8
6
Coss
100
4
Crss
2
10
1
10
100
1000
0
0
5
10
15
20
25
30
35
-VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
10
T
J
= 150
°
C
T
J
= 25
°
C
1
V
GS
= 0 V
0.1
0.4
0.6
0.8
1.0
1.2
-I D, Drain-to-Source Current (A)
-I
SD
, Reverse Drain Current (A)
0.1
-V
SD
,Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF6216PbF
2.5
V
DS
2.0
R
D
V
GS
R
G
D.U.T.
+
-I
D
, Drain Current (A)
1.5
V
GS
1.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
0.5
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
(Z
thJA
)
D = 0.50
10
0.20
0.10
Thermal Response
0.05
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
0.1
1
t
1
/ t
2
+T
A
100
1000
0.02
1
0.01
J
= P
DM
x Z
thJA
10
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
V
DD
5
