IRF6644PbF
IR MOSFET
Quality Requirement Category: Consumer
V
DSS
100V min.
Q
g tot
28nC
DirectFET
™
Power MOSFET
Typical values (unless otherwise specified)
V
GS
± 20V max
Q
gd
9.0nC
S
R
DS(on)
(typ
.
)
10.3m@ 10V
V
gs(th)
3.7V
Applications
RoHS Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specifies MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Low Profile (< 0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
D
G
S
D
MN
DirectFET™ ISOMETRIC
Applicable DirectFET
®
Outline and Substrate Outline
(see
pg. 13, 14 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6644PbF combines the latest HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the
lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The DirectFET
®
package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows
dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%.
The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V-75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliabil-
ity improvements, and makes the device ideal for high performance isolated DC-DC converters.
RDS(on) , Drain-to -Source On Resistance (m)
55
50
45
40
35
30
25
20
15
10
5
0
2
4
6
8
10
12
14
ID = 34A
RDS (on), Drain-to -Source On Resistance (m
)
60
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
ID , Drain Current (A)
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 12V
TJ = 125°C
TJ = 25°C
16
18
20
VGS, Gate -to -Source Voltage (V)
Figure 1
Typical On-Resistance vs. Gate Voltage
Figure 2
Typical On-Resistance vs. Drain Current
V2.0
2017-03-28
Final Datasheet
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Please read the important Notice and Warnings at the end of this document
IR MOSFET
IRF6644PbF
Table of Contents
Table of Contents
Applications
Description
1
2
3
4
…..………………………………………………………………………...……………..……………1
….……………………………………………………………………………………………………1
Parameters ………………………………………………………………………………………………3
Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
Electrical characteristics ………………………………………………………………………………5
Electrical characteristic diagrams ……………………………………………………………………6
Table of Contents ….………………………………………………………………………………………………...2
Package Information ………………………………………………………………………………………………13
Qualification Information ……………………………………………………………………………………………16
Revision History …………………………………………………………………………………………..…………17
Final Datasheet
2
V2.0
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IR MOSFET
IRF6644PbF
Parameters
1
Table1
Parameter
V
DS
R
DS(on) max
Parameters
Key performance parameters
Values
100
13
57
10
Units
V
m
A
A
I
D
@ T
C
@ 25°C
I
D
@ T
A
@ 25°C
Final Datasheet
3
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2017-03-28
IR MOSFET
IRF6644PbF
Maximum ratings and thermal characteristics
2
Maximum ratings and thermal characteristics
Table 2
Maximum ratings (at T
J
=25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Power Dissipation
Gate-to-Source Voltage
Peak Soldering Temperature
Operating and Storage Temperature
I
D
I
D
I
D
I
DM
P
D
P
D
P
D
V
GS
T
P
T
J,
T
STG
T
C
= 25°C, V
GS
@ 10V
T
C
= 70°C, V
GS
@ 10V
T
A
= 25°C, V
GS
@ 10V
T
C
= 25°C
T
C
= 25°C
T
C
= 70°C
T
A
= 25°C
-
-
-
Values
57
46
10
228
89
57
2.8
± 20
270
-40 ... 150
Unit
A
W
V
°C
Table 3
Thermal characteristics
Parameter
Symbol
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Case
R
JC
Junction-to-PCB Mounted
R
JA-PCB
Conditions
-
-
-
-
-
Min.
-
-
-
-
-
Typ.
-
12.5
20
-
1.0
Max.
45
-
-
1.4
-
Unit
°C/W
Table 4
Parameter
Avalanche characteristics
Symbol
E
AS
I
AR
Values
86
34
Unit
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET™ Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
(Starting T
J
= 25°C, L = 0.15mH, R
G
= 50
, I
AS
= 34A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Used double sided cooling, mounting pad with large heat sink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R
is measured at T
J
of approximately 90°C.
Final Datasheet
4
V2.0
2017-03-28
IR MOSFET
IRF6644PbF
Electrical characteristics
3
Table 5
Parameter
Electrical characteristics
Static characteristics
Symbol
Conditions
Values
Min. Typ. Max.
100
-
-
-
0.1
-
-
10.3 13
2.8
-
-
-
-
-
3.7
-11
-
-
-
1.6
4.8
-
20
250
100
-100
-
Unit
V
V/°C
m
V
mV°/C
µA
nA
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS
= 10V, I
D
= 34A
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 150µA
Gate Threshold Voltage Temp. Coefficient
V
GS(th)
/T
J
V
DS
= 100V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
I
GSS
V
GS
= 20V
Gate-to-Source Forward Leakage
V
GS
= -20V
I
GSS
Gate Resistance
R
G
-
Table 6
Parameter
Forward Trans conductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Table 7
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Dynamic characteristics
Symbol
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Conditions
V
DS
= 10V, I
D
= 34A
I
D
= 34A
V
DS
= 50V
V
GS
= 10V
See Fig.8
V
DS
= 16V ,V
GS
= 0V
V
DD
= 50V
I
D
= 34A
R
G
= 1.8
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
Values
Min. Typ. Max.
65
-
-
-
28
42
-
7.0
-
-
3.0
-
-
9.0
-
-
9.0
-
-
16
-
-
18
-
-
9.5
-
-
16
-
-
15
-
-
5.7
-
-
1770
-
-
280
-
-
60
-
-
-
2025
245
-
-
Unit
S
nC
nC
ns
pF
Reverse Diode
Symbol
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 34A,V
GS
= 0V
T
J
= 25°C, I
F
= 34A, V
DD
= 50V
di/dt = 100A/µs
D
G
S
Values
Min. Typ. Max.
-
-
-
-
-
-
-
-
53
97
57
228
1.3
80
146
Unit
A
V
ns
nC
Final Datasheet
5
V2.0
2017-03-28
