IRF7469PbF-1
V
DS
R
DS(on) max
(@V
GS
= 10V)
40
17
V
mΩ
S
S
1
2
3
4
HEXFET
®
Power MOSFET
8
7
A
A
D
D
D
D
R
DS(on) max
(@V
GS
= 4.5V)
21
15
9.0
nC
A
Q
g (typical)
I
D
(@T
A
= 25°C)
S
G
6
5
Top View
Benefits
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7469PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7469PbF-1
IRF7469TRPbF-1
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
40
± 20
9.0
7.3
73
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
1
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IRF7469PbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
40
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.04
12
15.5
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
17
V
GS
= 10V, I
D
= 9.0A
mΩ
21
V
GS
= 4.5V, I
D
= 7.2A
3.0
V
V
DS
= V
GS
, I
D
= 250μA
20
V
DS
= 32V, V
GS
= 0V
μA
100
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
15
7.0
5.0
16
11
2.2
14
3.5
2000
480
28
Max. Units
Conditions
–––
S
V
DS
= 20V, I
D
= 7.2A
23
I
D
= 7.2A
11
nC
V
DS
= 20V
8.0
V
GS
= 4.5V
24
V
GS
= 0V, V
DS
= 16V
–––
V
DD
= 20V
–––
I
D
= 7.2A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 20V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
210
7.2
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.80
0.65
47
91
77
150
2.3
A
73
1.3
–––
71
140
120
230
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
2
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 7.2A, V
GS
= 0V
T
J
= 125°C, I
S
= 7.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.2A, V
R
=15V
di/dt = 100A/μs
T
J
= 125°C, I
F
= 7.2A, V
R
=20V
di/dt = 100A/μs
June 23, 2014
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2014 International Rectifier
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IRF7469PbF-1
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM 3.5V
TOP
100
VGS
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM 3.5V
TOP
3.5V
3.5V
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
10
0.1
20μs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 9.0A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 150
°
C
1.5
T
J
= 25
°
C
1.0
0.5
10
3.5
V DS = 25V
20μs PULSE WIDTH
4.0
4.5
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
3
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2014 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7469PbF-1
100000
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
10
I
D
=
7.2A
V
DS
= 32V
V
DS
= 20V
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
4
100
Crss
10
1
10
100
2
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
10
I
D
, Drain Current (A)
100
10us
T
J
= 25
°
C
1
100us
10
1ms
0.1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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Fig 8.
Maximum Safe Operating Area
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IRF7469PbF-1
10.0
V
DS
8.0
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
6.0
-
V
DD
4.5V
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
2.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response (Z
thJA
)
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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2014 International Rectifier
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June 23, 2014
