SMD Type
N-Channel
MOSFET
IRF7855-HF
MOSFET
SOP-8
■
Features
●
V
DS (V)
= 60V
●
I
D
= 12 A (V
GS
= 10V)
●
R
DS(ON)
＜
15 mΩ (V
GS
= 10V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
A
A
D
D
D
D
0.21
-0.02
+0.04
1.50
0.15
S
S
S
G
1
8
7
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
2
3
6
4
5
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Avalanche Current
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
I
AS
E
AS
dv/dt
R
thJA
R
thJC
T
J
T
stg
TA=25℃
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Rating
60
±20
12
8.7
97
2.5
0.02
7.2
540
9.9
50
20
150
-55 to 150
W
W/℃
A
mJ
V/ns
℃/W
A
Unit
V
℃
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1
SMD Type
N-Channel
MOSFET
IRF7855-HF
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Source Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
I
SM
V
SD
I
S
= 7.2A, V
GS
=0, d
I
/d
t
= 100A/μs,T
J
= 25℃
I
F
= 7.2A, V
DD
=25V, d
I
/d
t
= 100A/μs,T
J
= 25℃
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
= 7.2A, V
GS
=0, T
J
= 25℃
D
MOSFET
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=60V, V
GS
=0V, T
J
=125℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=100μA
V
GS
=10V, I
D
=12A
V
DS
=25V, I
D
=7.2A
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
= 0V, V
DS
= 1V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 48V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0 to 48V
V
GS
=10V, V
DS
=30V, I
D
=7.2A
Min
60
Typ
Max
20
250
±100
Unit
V
μA
nA
V
mΩ
S
2
14
1560
440
120
1910
320
520
26
6.8
9.6
8.7
13
16
12
33
38
4
15
pF
39
nC
V
GS
=10V, V
DS
=30V, I
D
=7.2A,R
G
=6.2Ω
ns
50
57
2.3
A
97
nC
G
S
0.71
1.3
V
■
Marking
Marking
7855
KC****
F
2
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SMD Type
N-Channel
MOSFET
IRF7855-HF
■
Typical Characterisitics
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
MOSFET
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
4.5V
1
0.1
4.5V
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
≤
Tj = 25°C
60µs PULSE WIDTH
≤
Tj = 150°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
ID = 12A
VGS = 10V
10
T J = 150°C
1.5
1
T J = 25°C
(Normalized)
1.0
VDS = 15V
≤
60µs PULSE WIDTH
0.1
3
4
5
6
7
8
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
SMD Type
N-Channel
MOSFET
IRF7855-HF
■
Typical Characterisitics
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
MOSFET
12.0
ID= 7.2A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 48V
VDS= 30V
VDS= 12V
C, Capacitance (pF)
C iss
1000
C oss
C rss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
T J = 150°C
.
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
T J = 25°C
1
1msec
1
0.1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
100
1000
0.01
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.kexin.com.cn
SMD Type
N-Channel
MOSFET
IRF7855-HF
■
Typical Characterisitics
12
10
ID, Drain Current (A)
MOSFET
8
6
4
2
0
25
50
75
100
125
150
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
+
-
≤
1
≤
0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
R
2
R
2
τ
2
τ
2
R
3
R
3
τ
A
τ
A
τ
3
τ
3
10
Thermal Response ( Z thJA )
1
0.1
Ri (°C/W)
τ
i (sec)
6.734
0.027848
27.268
16.003
1.3813
53
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τ
Ri
i
/
Ci=
τ
Ri
i
/
0.001
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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