PD- 95146
IRFB4710PbF
IRFS4710PbF
IRFSL4710PbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Motor Control
l
Uninterrutible Power Supplies
l
Lead-Free
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
V
DSS
100V
R
DS(on)
max
0.014Ω
I
D
75A
TO-220AB
IRFB4710
D
2
Pak
IRFS4710
TO-262
IRFSL4710
Max.
75
53
300
3.8
200
1.4
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Notes
through
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
are on page 11
Typ.
–––
0.50
–––
–––
Max.
0.74
–––
62
40
Units
°C/W
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1
04/22/04
IRFB/IRFS/IRFL4710PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.11
0.011
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.014
Ω
V
GS
= 10V, I
D
= 45A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
1.0
V
DS
= 95V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
110
43
40
35
130
41
38
6160
440
250
1580
280
430
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 45A
170
I
D
= 45A
–––
nC V
DS
= 50V
–––
V
GS
= 10V,
–––
V
DD
= 50V
–––
I
D
= 45A
ns
–––
R
G
= 4.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 80V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
190
45
20
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
75
––– –––
showing the
A
G
integral reverse
––– ––– 300
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 45A, V
GS
= 0V
––– 74 110
ns
T
J
= 25°C, I
F
= 45A
––– 180 260
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
www.irf.com
IRFB/IRFS/IRFL4710PbF
1000
I
D
, Drain-to-Source Current (A)
100
10
1
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
1000
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
10
6.0V
0.1
6.0V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
0.01
0.1
1
0.1
20µs PULSE WIDTH
T = 175 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 75A
I
D
, Drain-to-Source Current (A)
100
T
J
= 175
°
C
2.5
2.0
10
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
6.0
V DS = 50V
20µs PULSE WIDTH
9.0
7.0
8.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFB/IRFS/IRFL4710PbF
10000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
I
D
= 45A
V
GS
, Gate-to-Source Voltage (V)
8000
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance(pF)
6000
Ciss
12
4000
8
2000
4
Coss
0
1
Crss
10
100
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
160
120
200
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
ID , Drain-to-Source Current (A)
100
100
100µsec
10
T
J
= 175
°
C
10
1
T
J
= 25
°
C
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
0.1
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFB/IRFS/IRFL4710PbF
80
V
DS
V
GS
R
D
I
D
, Drain Current (A)
60
R
G
D.U.T.
+
-
V
DD
10V
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.0001
0.001
P
DM
t
1
t
2
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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