StrongIRFET™
IRFB7546PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
60V
6.0m
7.3m
75A
G
S
max
I
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
S
D
G
TO-220AB
IRFB7546PbF
D
Drain
S
Source
Base part number
IRFB7546PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7546PbF
)
RDS(on), Drain-to -Source On Resistance (m
24
ID = 45A
20
16
12
8
4
0
2
4
6
8
10
12
14
16
18
20
TJ = 125°C
ID, Drain Current (A)
80
60
40
20
TJ = 25°C
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
IRFB7546PbF
Units
A
W
W/°C
V
°C
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V
75
Continuous Drain Current, V
GS
@ 10V
53
Pulsed Drain Current
300
Maximum Power Dissipation
99
Linear Derating Factor
0.7
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
110
E
AS (Thermally limited)
Single Pulse Avalanche Energy
170
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
1.52
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient
R
JA
–––
62
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
mJ
A
mJ
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max.
––– –––
46
–––
6.0
7.3
7.5
–––
–––
3.7
–––
1.0
––– 150
––– 100
––– -100
1.6
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 45A
m
V
GS
= 6.0V, I
D
= 23A
V
V
DS
= V
GS
, I
D
= 100µA
V
DS
=60 V, V
GS
= 0V
µA
V
DS
=60V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 110µH, R
G
= 50, I
AS
= 45A, V
GS
=10V.
I
SD
100A, di/dt
1260A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 19A, V
GS
=10V
2
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November 7, 2014
IRFB7546PbF
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
58
14
18
40
11
51
32
34
3000
280
180
290
370
Typ.
–––
–––
–––
7.9
29
32
33
40
1.9
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 45A
87
I
D
= 45A
–––
V
DS
= 30V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 30V
–––
I
D
= 45A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
75
A
300
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 45A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 45A,V
DS
= 60V
T
J
= 25°C
V
DD
= 51V
ns
T
J
= 125°C
I
F
= 45A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFB7546PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
60µs
PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 45A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1.6
1.2
1
VDS = 25V
0.1
2
3
4
5
6
7
8
60µs
PULSE WIDTH
0.8
0.4
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID = 45A
VDS = 48V
VDS = 30V
VDS= 12V
C, Capacitance (pF)
10000
Ciss
1000
C
Crss oss
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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1000
IRFB7546PbF
100
100µsec
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
10
10
TJ = 175°C
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
1
10msec
1
VGS = 0V
0.1
0.1
0.4
0.7
1.0
1.3
1.6
VSD , Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
0.01
10
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
78
Id = 1.0mA
76
74
72
70
68
Fig 10.
Maximum Safe Operating Area
0.5
0.4
Energy (µJ)
0.3
0.2
0.1
66
64
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
50
100
150
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 12.
Typical C
oss
Stored Energy
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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