型号
- 型号
- 关键词
Power Field-Effect Transistor, 3.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
厂商名称：Vishay(威世)
下载文档| 型号 | IRFF330 | IRFF331 | IRFF332 | IRFF333 |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | Power Field-Effect Transistor, 3.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | Power Field-Effect Transistor, 3A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 |
| 厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknow | unknow |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 400 V | 350 V | 400 V | 350 V |
| 最大漏极电流 (ID) | 3.5 A | 3.5 A | 3 A | 3 A |
| 最大漏源导通电阻 | 1 Ω | 1 Ω | 1.5 Ω | 1.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-205 | TO-205 | TO-205 | TO-205 |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
