Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
厂商名称:International Rectifier ( Infineon )
厂商官网:http://www.irf.com/
器件标准:
下载文档型号 | IRFR214TRPBF | IRFR214TRLPBF | IRFR214TRRPBF |
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描述 | Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 |
是否无铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 |
零件包装代码 | TO-252AA | TO-252AA | TO-252AA |
包装说明 | LEAD FREE, PLASTIC, DPAK-3 | LEAD FREE, PLASTIC, DPAK-3 | LEAD FREE, PLASTIC, DPAK-3 |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknown | not_compliant | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
其他特性 | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
雪崩能效等级(Eas) | 190 mJ | 190 mJ | 190 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 250 V | 250 V | 250 V |
最大漏极电流 (ID) | 2.2 A | 2.2 A | 2.2 A |
最大漏源导通电阻 | 2 Ω | 2 Ω | 2 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-252AA | TO-252AA | TO-252AA |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
JESD-609代码 | e3 | e3 | e3 |
湿度敏感等级 | 1 | 1 | 1 |
元件数量 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | 260 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 8.8 A | 8.8 A | 8.8 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES |
端子面层 | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL |
端子形式 | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
最大漏极电流 (Abs) (ID) | 2.2 A | - | 2.2 A |
最高工作温度 | 150 °C | - | 150 °C |
最大功率耗散 (Abs) | 25 W | - | 25 W |
厂商名称 | - | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |