S E M I C O N D U C T O R
IRFU9110, IRFR9110
3.1A, 100V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
January 1996
Features
• 3.1A, 100V
• r
DS(ON)
= 1.200Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
DRAIN (FLANGE)
Description
The IRFU9110 and IRFR9110 are advanced power MOS-
FETs designed, tested, and guaranteed to withstand a spe-
cific level of energy in the avalanche breakdown mode of
operation. These are P-Channel enhancement-mode silicon
gate power field-effect transistors designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high-power bipolar
switching transistors requiring high speed and low gate-drive
power. These types can be operated directly from integrated
circuits.
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
Symbol
PACKAGING AVAILABILITY
PART NUMBER
IRFU9110
IRFR9110
PACKAGE
TO-251AA
TO-252AA
BRAND
IF9110
IF9110
G
D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e., IRFR91109A.
S
Formerly developmental type TA17541.
Absolute Maximum Ratings
T
C
= +25
o
C
IRFU9110, IRFR9110
UNITS
V
V
V
A
Drain Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
-100
-100
±20
3.1
Refer to Peak Current Curve
Refer to UIS Curve
25
0.2
-55 to +150
260
W
W/
o
C
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
4001.2
4-3
Specifications IRFU9110, IRFR9110
Electrical Specifications
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= -100V,
V
GS
= 0V
V
GS
=
±20V
I
D
= 1.9A, V
GS
= -10V
V
DD
= -50V, I
D
= 4A
R
L
= 11Ω, V
GS
= -10V
R
GS
= 24Ω
T
C
= +25
o
C
T
C
= +150
o
C
MIN
-100
-2.0
-
-
-
-
-
-
-
-
-
-
V
GS
= 0 to -10V
V
DD
= -80V,
I
D
= 3.1A,
R
L
= 25.8Ω
-
-
-
V
DS
= -25V, V
GS
= 0V
f = 1MHz
-
-
-
-
TYP
-
-
-
-
-
-
-
10
27
15
17
-
-
-
-
290
94
18
-
MAX
-
-4.0
-1
-50
100
1.200
50
-
-
-
-
50
8.7
4.1
2.2
-
-
-
5.00
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate-to-Drain Charge
Gate-to-Source Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance
Junction to Case
Thermal Resistance
Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G
Q
GD
Q
GS
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
-
-
100
o
C/W
Source-Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
RR
Q
RR
TEST CONDITIONS
I
SD
= -3.1A
I
SD
= -4.0A, dI
SD
/dt = -100A/µs
MIN
-
-
TYP
-
105
0.51
MAX
-5.5
160
1.0
UNITS
V
ns
µC
4-4
IRFU9110, IRFR9110
Typical Performance Curves
-20
-10
I
D
, DRAIN CURRENT (A)
100µs
T
C
= +25
o
C
Z
θJC
, THERMAL RESPONSE (
o
C/W)
5
0.5
1
0.2
0.1
.05
.02
.01
0.1
SINGLE PULSE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
1ms
-1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
-0.1
-1
-10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-100
100ms
DC
V
DSS
MAX = -100V
0.01
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
= +25
o
C
V
GS
= -20V
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-3.5
-30
-3.0
I
D
, DRAIN CURRENT (A)
-2.5
-2.0
-1.5
-1.0
-0.5
0
25
I
DM
, PEAK CURRENT CAPABILITY (A)
-10
I
=
I
150
–
T
C
-------------------
-
25
125
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
50
75
100
(
o
C)
125
150
T
C
, CASE TEMPERATURE
t, PULSE WIDTH (s)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
V
GS
= -20V
-5
I
D
, DRAIN CURRENT (A)
-4
-3
-2
-1
0
0.0
V
GS
= -4.5V
V
GS
= -10V
V
GS
= -8V
I
D(ON)
, ON STATE DRAIN CURRENT (A)
-6
PULSE DURATION = 250µs, T
C
= +25
o
C
-10
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-8
-55
o
C
-6
+25
o
C
-4
+150
o
C
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
-2
-2.0
-4.0
-6.0
-8.0
-10.0
0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
4-5
IRFU9110, IRFR9110
Typical Performance Curves
2.5
(Continued)
PULSE DURATION = 250µs, V
GS
= -10V, I
D
= -3.1A
2.0
V
GS(TH)
, NORMALIZED GATE
THRESHOLD VOLTAGE
V
GS
= V
DS
, I
D
= -250µA
r
DS(ON)
, NORMALIZED ON RESISTANCE
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80
(
o
C)
120
160
T
J
, JUNCTION TEMPERATURE
0.0
-80
-40
0
40
80
o
120
160
T
J
, JUNCTION TEMPERATURE ( C)
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
(
o
C)
125
150
T
C
, CASE TEMPERATURE
BV
DSS
, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
2.0
I
D
= -250µA
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
V
GS
= 0V, f = 1MHz
FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
-100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
DD
= BV
DSS
-75
R
L
= 32.2Ω
I
G(REF)
= -1.45mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
-7.5
-10.0
V
GS
, GATE-SOURCE VOLTAGE (V)
400
C
ISS
300
C, CAPACITANCE (pF)
200
C
OSS
100
C
RSS
0
0
-5
-10
-15
-20
-25
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-50
-5.0
-25
-2.5
0
20
0.0
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
4-6
IRFU9110, IRFR9110
Typical Performance Curves
-10
-7.75
I
AS
, AVALANCHE CURRENT (A)
E
AS
= 140mJ
CONDITIONS:
V
DD
= -25V, I
AS
= -3.1A,
L = 21mH, STARTING T
J
= 25
o
C
(Continued)
STARTING T
J
= +25
o
C
STARTING T
J
= +150
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
-1
0.01
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
R
G
-
V
DD
+
BV
DSS
V
DS
V
DD
0V
t
P
I
L
-V
GS
DUT
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
V
DD
R
L
t
ON
t
D(ON)
t
R
V
DS
V
DS
V
GS
10%
t
OFF
t
D(OFF)
t
F
10%
0V
90%
90%
-V
GS
R
GS
DUT
10%
50%
PULSE WIDTH
90%
50%
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-7
