型号
- 型号
- 关键词
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
厂商名称：SAMSUNG(三星)
厂商官网：http://www.samsung.com/Products/Semiconductor/
下载文档| 型号 | IRFW610A | IRFI610A |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 44 mJ | 44 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V |
| 最大漏极电流 (Abs) (ID) | 3.3 A | 3.3 A |
| 最大漏极电流 (ID) | 3.3 A | 3.3 A |
| 最大漏源导通电阻 | 1.5 Ω | 1.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 3.1 W | 3.1 W |
| 最大脉冲漏极电流 (IDM) | 10 A | 10 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO |
| 端子形式 | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON |
