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IRFY430-QR-EB

Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

器件类别：分立半导体    晶体管   

厂商名称：TT Electronics plc

厂商官网：http://www.ttelectronics.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
TT Electronics plc
包装说明
FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code
compliant
Is Samacsys
N
其他特性
HIGH RELIABILITY
外壳连接
ISOLATED
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
500 V
最大漏极电流 (ID)
3.7 A
最大漏源导通电阻
1.84 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-MSFM-T3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
METAL
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
14 A
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
N-CHANNEL
POWER MOSFET
IRFY430 / IRFY430M
•
BVDSS = 500V, MOSFET Transistor
In A Hermetic Metal TO-257AB Package
•
•
Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS
VGS
ID
ID
IDM
PD
EAS
IAR
EAR
dv/dt
TJ
Tstg
Symbols
R
θJC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
(1)
Total Power Dissipation at
Tc = 25°C
Tc = 100°C
Tc = 25°C
Derate Above 25°C
Single Pulse Avalanche Energy
(2)(5)
Avalanche Current
(1)(5)
Repetative Pulse Avalanche Energy
(1)(5)
Peak Diode Recovery
(3)(5)
Junction Temperature Range
Storage Temperature Range
500V
±20V
4.5A
2.8A
18A
75W
0.6W/°C
280mJ
4.5A
7.5mJ
3.5V/ns
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Parameters
Thermal Resistance, Junction To Case
Max.
1.67
Units
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols
LD
LS
Parameters
Internal Drain Inductance
Internal Source Inductance
Min.
Typ.
8.7
8.7
Max.
Units
nH
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, Starting TJ = 25°C, L
=
28mH, Peak IL = 4.5A, VGS = 10V
(3)
(4)
(5)
@ ISD
≤
4.5A, di/dt
≤
75A/µs, VDD
≤
BVDSS, TJ
≤
150°C, Suggested RG = 7.5Ω
Pulse Width
≤
380us,
δ ≤
2%
By Design Only, Not A Production Test.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9528
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
N-CHANNEL
POWER MOSET
IRFY430 / IRFY430M
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
BVDSS
∆
BVDSS
∆
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Parameters
Drain-Source Breakdown
Voltage
Temperature Coefficent of
Breakdown Voltage
Static Drain-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage
Drain Current
Forward Gate-Source
Leakage
Reverse Gate-Source
Leakage
Test Conditions
VGS = 0
Reference
to 25°C
VGS = 10V
VGS = 10V
VDS = VGS
VDS
≥
15V
VGS = 0
Min.
500
Typ
Max.
Units
V
ID = 1.0mA
ID = 1.0mA
ID = 2.4A
ID = 3.7A
(4)
0.78
1.6
1.84
2
(4)
V/°C
(4)
Ω
V
S(
Ʊ
)
ID = 250µA
I DS = 2.4A
4
1.5
25
250
100
VDS = 0.8BVDSS
TJ = 125°C
µA
VGS = 20V
VGS = -20V
nA
-100
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
(5)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(5)
VGS = 0
VDS = 25V
f = 1.0MHz
VGS = 10V
ID = 3.7A
VDS = 0.5BVDSS
VDD = 250V
ID = 3.7A
RG = 7.5
Ω
610
135
65
29.5
4.6
19.7
35
30
55
30
ns
nC
pF
Qgs
Qgd
(5)
td(on)
tr
td(off)
tf
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
ISM
VSD
trr
Qrr
Continuous Source Current
Pulse Source Current
(1)
4.5
18
IS = 3.7A
VGS = 0
(4)
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TJ = 25°C
1.4
900
(4)
V
ns
IS = 3.7A
VDD
≤
50V
TJ = 25°C
di/dt = 100A/µs
7
µC
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9528
Issue 1
Page 2 of 3
N-CHANNEL
POWER MOSET
IRFY430 / IRFY430M
MECHANICAL DATA
Dimensions in mm (inches)
10.92 (0.430)
10.41 (0.410)
4.83 (0.190)
5.33 (0.210)
0.64 (0.025)
0.89 (0.035)
16.38 (0.645)
16.89 (0.665)
13.21 (0.52)
13.72 (0.54)
3.56 (0.140)
Dia
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1
2
3
12.70 (0.500)
14.73 (0.750)
0.89 (0.035)
Dia.
1.27 (0.050)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO220M (TO-257AB)
Part No.
IRFY430
IRFY430M
Pin 1
Gate
Drain
Pin 2
Drain
Source
Pin 3
Source
Gate
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9528
Issue 1
Page 3 of 3
查看更多>
参数对比
与IRFY430-QR-EB相近的元器件有：IRFY430R1、IRFY430、IRFY430M、IRFY430-JQR-B。描述及对比如下：
型号 IRFY430-QR-EB IRFY430R1 IRFY430 IRFY430M IRFY430-JQR-B
描述 Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
厂商名称 TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
包装说明 FLANGE MOUNT, R-MSFM-T3 FLANGE MOUNT, R-MSFM-T3 FLANGE MOUNT, R-MSFM-T3 FLANGE MOUNT, R-MSFM-T3 FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code compliant compliant compliant compliant compli
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 500 V 500 V 500 V 500 V 500 V
最大漏极电流 (ID) 3.7 A 3.7 A 3.7 A 3.7 A 3.7 A
最大漏源导通电阻 1.84 Ω 1.84 Ω 1.84 Ω 1.84 Ω 1.84 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-MSFM-T3 R-MSFM-T3 R-MSFM-T3 R-MSFM-T3 R-MSFM-T3
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 METAL METAL METAL METAL METAL
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 14 A 14 A 14 A 14 A 14 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
是否Rohs认证 不符合 符合 不符合 - 不符合
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
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