IRFY9130
MECHANICAL DATA
Dimensions in mm (inches)
4.70
5.00
0.70
0.90
3.56
Dia.
3.81
10.41
10.67
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
0.89
1.14
16.38
16.89
13.39
13.64
1 2 3
12.70
19.05
-100V
-9.3A
Ω
0.31Ω
10.41
10.92
2.54
BSC
2.65
2.75
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
TO–220M – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
θJC
R
θJA
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
±20V
-9.3A
-5.8A
-37A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
80°C/W max.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/97
IRFY9130
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= -9.3A
V
DS
= 0.5BV
DSS
V
DD
= -50V
I
D
= -9.3A
R
G
= 7.5Ω
I
D
= -9.3A
I
D
= -5.8A
I
D
= -9.3A
I
D
= 250µA
I
DS
= -5.8A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
-100
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
-0.1
0.31
0.36
-2
2.5
-25
-250
-100
100
800
350
125
14.7
1
2
30
7.1
21
60
140
140
140
-9.3
-37
-4
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
pF
nC
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
I
S
= -9.3A
V
GS
= 0
I
S
= -9.3A
T
J
= 25°C
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
(from 6mm down drain lead pad to centre of die)
A
V
ns
µC
T
J
= 25°C
-4.7
250
3
8.7
8.7
nH
(from 6mm down source lead to centre of source bond pad)
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/97
