IRFY9310F
MECHANICAL DATA
Dimensions in mm (inches)
10.40
10.80
3.0
4.50
4.81
0.75
0.95
16.30
16.70
3.50
Dia.
3.70
10.50
10.67
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
0.75
0.85
1 2 3
➀
2.1
max.
➁
1.0 dia.
3 places
400V
1.8A
7.0
W
20 Min.
2.54
BSC
2.65
2.96
• HERMETICALLY SEALED TO–220 METAL
PACKAGE WITH FLEXIBLE LEADS
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
TO220 FLEX
PIN1 – Gate
PIN 2 – Drain
PIN 3 – Source
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
T
L
R
q
JC
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
±20V
A
1.1A
7.2A
50W
0.4W/°C
–55 to 150°C
300°C
2.5°C/W max.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/00
IRFY9310F
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= - 1mA
V
GS
= - 10V
V
DS
= V
GS
V
DS
=
-50V
V
DS
= - 400V
V
DS
= - 320V
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= - 25V
f = 1MHz
V
GS
= -10V
V
DS
= -320V
V
DD
= 200V
I
D
= - 1.1A
R
G
= 21
W
R
D
= 180
W
Mosfet symbol showing the
G
D
Min.
- 400
Typ.
Max.
Unit
V
I
D
= - 250
m
A
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On–State
Resistance
1
Forward Transconductance
Drain-to-Source Leakage Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
1
Rise Time
1
Turn–Off Delay Time
1
Fall Time
1
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
Forward Turn–On Time
Reference to 25°C
- 0.41
7.0
-2
0.91
-100
-500
100
-100
270
50
8.0
13
3.2
5
11
10
25
24
- 1.8
- 7.2
-4
170
640
Negligible
4.5
7.5
260
960
-4
V / °C
I
D
= - 1.1A
I
D
= -250
m
A
I
D
= -1.1A
V
GS
= 0
T
J
= 125°C
W
V
S
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
m
A
nA
pF
I
D
= 1.1A
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
A
V
ns
integral reverse p-n junction diode
S
I
S
= - 1.1A
V
GS
= 0V
I
F
= -1.1A
T
J
= 25°C
T
J
= 25°C
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
m
C
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(6mm down drain lead to centre of die)
Internal Source Inductance
(6mm down source lead to centre of source bond pad)
nH
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/00
