50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
厂商名称:SAMSUNG(三星)
厂商官网:http://www.samsung.com/Products/Semiconductor/
下载文档型号 | IRFZ40 | IRFZ44 | IRFZ42 | IRFZ45 |
---|---|---|---|---|
描述 | 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | POWER, FET | POWER, FET | 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
零件包装代码 | SFM | SFM | SFM | SFM |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 53 mJ | 53 mJ | 53 mJ | - |
配置 | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | - |
最小漏源击穿电压 | 50 V | 60 V | 50 V | - |
最大漏极电流 (Abs) (ID) | 51 A | 50 A | 46 A | - |
最大漏极电流 (ID) | 50 A | 50 A | 35 A | - |
最大漏源导通电阻 | 0.028 Ω | 0.028 Ω | 0.035 Ω | - |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | - |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - |
元件数量 | 1 | 1 | 1 | - |
端子数量 | 3 | 3 | 3 | - |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
最高工作温度 | 175 °C | 175 °C | 175 °C | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
功耗环境最大值 | 150 W | 150 W | 150 W | - |
最大功率耗散 (Abs) | 125 W | 150 W | 125 W | - |
最大脉冲漏极电流 (IDM) | 210 A | 210 A | 190 A | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | - |
表面贴装 | NO | NO | NO | - |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - |
端子位置 | SINGLE | SINGLE | SINGLE | - |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - |
晶体管元件材料 | SILICON | SILICON | SILICON | - |
最大关闭时间(toff) | 205 ns | 205 ns | 205 ns | - |
最大开启时间(吨) | 242 ns | 242 ns | 242 ns | - |
厂商名称 | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |