PD-95891A
IRG4BH20K-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs @ V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard D
2
Pak package
• Lead-Free
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 3.17V
@V
GE
= 15V, I
C
= 5.0A
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
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1
01/21/2010
IRG4BH20K-SPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
1200 —
Emitter-to-Collector Breakdown Voltage
18
—
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
1.13
— 3.17
V
CE(ON)
Collector-to-Emitter Saturation Voltage
— 4.04
— 2.84
V
GE(th)
Gate Threshold Voltage
3.5
—
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
-10
g
fe
Forward Transconductance
2.3
3.5
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 2.5mA
4.3
I
C
= 5.0A
V
GE
= 15V
—
I
C
= 11A
See Fig.2, 5
V
—
I
C
= 5.0A , T
J
= 150°C
6.5
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 1mA
—
S
V
CE
= 100 V, I
C
= 5.0A
250
V
GE
= 0V, V
CE
= 1200V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
28
43
I
C
= 5.0A
4.4 6.6
nC V
CC
= 400V
See Fig.8
12
18
V
GE
= 15V
23
—
26
—
T
J
= 25°C
ns
93 140
I
C
=5.0A, V
CC
= 960V
270 400
V
GE
= 15V, R
G
= 50Ω
0.45 —
Energy losses include "tail"
0.44 —
mJ See Fig. 9,10,14
0.89 1.2
—
—
µs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 50Ω
23
—
T
J
= 150°C,
28
—
I
C
= 5.0A, V
CC
= 960V
ns
100 —
V
GE
= 15V, R
G
= 50Ω
620 —
Energy losses include "tail"
1.7
—
mJ
See Fig. 10,11,14
7.5
—
nH
Between lead and center of die contact
435 —
V
GE
= 0V
44
—
pF
V
CC
= 30V
See Fig. 7
8.3
—
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
=50Ω,
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
2
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IRG4BH20K-SPbF
16
F or both:
Triangular wave:
Load Current ( A )
12
Duty cycle: 50%
TJ = 125˚ C
T sink = 90˚ C
Gate drive as specified
Power Dissipation = 15W
Clamp voltage:
80% of rated
Sq uare wav e:
8
60% of rated
voltage
4
Ideal diodes
0
)
0.1
1
f, Frequency (kHz)
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
°
C
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
°
C
1
T
J
= 25
°
C
V
GE
= 15V
20µs PULSE WIDTH
1
10
T
J
= 25
°
C
V
CC
= 50V
5µs PULSE WIDTH
6
8
10
12
14
0.1
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BH20K-SPbF
12
5.0
Maximum DC Collector Current(A)
9
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
4.0
I
C
= 10 A
6
3.0
I
C
=
5A
3
I
C
= 2.5 A
0
25
50
75
100
125
150
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
T
J
,
,
Junction Temperature
(
(
°C )
J
Junction Temperature
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BH20K-SPbF
800
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 11A
16
C, Capacitance (pF)
600
Cies
400
12
8
200
Coes
Cres
4
0
1
10
100
0
V
CE
, Collector-to-Emitter Voltage (V)
0
5
10
15
20
25
30
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.95
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 960V
V
GE
= 15V
T
J
= 25
°
C
0.90
I
C
= 11A
10
Ω
R
G
= 50Ohm
V
GE
= 15V
V
CC
= 960V
I
C
=
10
A
0.85
I
C
=
1
5
A
I
C
=
2.5
A
0.80
0.75
0.70
0
10
20
30
40
50
R
G
R
,
G
Gate Resistance (Ohm)
, Gate Resistance (
Ω )
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
T
J
,
Junction Temperature
(
(
°C )
)
J
,
Junction Temperature
°
C
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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电源技术
