PD - 93865A
IRGC15B120UB
Die in Wafer Form
Features
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GEN5 Non Punch Through (NPT) Technology
UltraFast
10
µ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benchmark Efficiency above 20KHz
Optimized for Welding, UPS, and Induction Heating
Rugged with UltraFast Performance
Excellent Current Sharing in Parallel Operation
C
Benefits
G
E
1200V
I
C(nom)
=15A
V
CE(on) typ.
=3.67V @
I
C(nom)
@ 25°C
UltraFast IGBT
Short Circuit Rated
150mm Wafer
Electrical Characteristics (Wafer Form)
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (min, max)
Collector-to-Emitter Saturation Voltage 2.85V min, 3.45V max
Colletor-to-Emitter Breakdown Voltage
1200V min
Gate Threshold Voltage
4.4V min, 6.0V max
Zero Gate Voltage Collector Current
7µA max
Gate-to-Emitter Leakage Current
± 1.1µA max
Test Conditions
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 125µA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 125µA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.170" x 0.243"
150mm, with std. < 100 > flat
185µm, +/-15µm
01-5381
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
www.irf.com
03/20/02
