PD-9.1440
TARGET
IRGCH20SE
IRGCH20SE IGBT Die in Wafer Form
C
G
E
1200 V
Size 2
Standard Speed
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
Test Conditions
3.3V Max.
I
C
= 20A, T
J
= 25°C, V
GE
= 15V
1200V Min.
T
J
= 25°C, I
CES
= 250µA, V
GE
= 0V
3.0V Min., 5.5V Max.
V
GE
= V
CE
, T
J
=25°C, I
C
=250µA
250 µA Max.
T
J
= 25°C, V
CE
= 1200V
±
500 nA Max.
T
J
= 25°C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRGPH20S
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.112" x 0.150"
125mm, with std. < 100 > flat
.015" + / -.003"
01-5119
100 Microns
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
INK DOT
LOCATION
1.46
(.057 )
NOTES :
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES
BONDING PADS : < 0.635 TOLERANCE = +/- 0.013
WIDTH
< (.0250 ) TOLERANCE =+/- (.0005 )
&
> 0.635 TOLERANCE = +/- 0.025
LENGTH
> (.0250 ) TOLERANCE = +/- (.0010 )
OVERALL DIE
< 1.270 TOLERANCE = +/- 0.102
WIDTH
< (.050 ) TOLERANCE = +/- (.004 )
&
> 0.635 TOLERANCE = +/- 0.203
LENGTH
> (.050 ) TOLERANCE = +/- (.008 )
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
1.05
(.041 )
EMITTER
3.81
(.150 )
GAT E
0.73
(.029 )
2.88
(.112 )
0.71
(.028 )
嵌入式系统