PD-97326C
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number
IRHLNM77110
IRHLNM73110
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
0.29Ω
0.29Ω
I
D
6.5A
6.5A
2N7609U8
IRHLNM77110
100V, N-CHANNEL
TECHNOLOGY
Refer to Page 10 for 2 Additional Part Numbers -
IRHLNMC77110 and IRHLNMC73110 (Ceramic Lid)
International Rectifier’s R7
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
SMD-0.2
(METAL LID)
Features:
n
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
0.25 (Typical)
6.5
4.1
26
23.2
0.18
±10
21
6.5
2.32
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
www.irf.com
1
02/10/16
IRHLNM77110, 2N7609U8
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
—
1.0
—
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.105
—
—
-6.0
—
—
—
—
—
—
—
—
—
—
—
—
6.8
572
124
1.6
10.5
—
—
0.29
2.0
—
—
1.0
10
100
-100
11
4.0
6.0
18
75
50
12
—
—
—
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 4.1A
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 4.1A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 6.5A
VDS = 50V
VDD = 50V, ID = 6.5A,
VGS = 5.0V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
C oss
C rss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
nC
ns
nH
pF
Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
6.5
26
1.4
215
1.05
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 6.5A, VGS = 0V
Tj = 25°C, IF = 6.5A, di/dt
≤
100A/µs
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
5.4
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHLNM77110, 2N7609U8
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-state
Resistance (SMD-0.2)
Diode Forward Voltage
Upto 300K Rads (Si)
1
Min
100
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 80V, V
GS
=0V
V
GS
= 4.5V, I
D
= 4.1A
V
GS
= 4.5V, I
D
= 4.1A
V
GS
= 0V, I
D
= 6.5A
—
2.0
100
-100
1.0
0.26
0.29
1.4
1. Part Numbers IRHLNM77110, IRHLNM73110. Additional part numbers IRHLNMC77110, IRHLNMC73110 are
listed on page 10.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
62 ± 5%
85 ± 5%
2
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 10%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
100
100
100
-2V
100
100
100
-4V
100
100
100
-5V
100
100
100
-6V
100
100
-
-7V
100
-
-
120
100
80
60
40
20
0
0
-1
-2
-3
-4
-5
-6
-7
VGS
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
For footnotes refer to the last page
www.irf.com
VDS
Fig a.
Typical Single Event Effect, Safe Operating Area
3
IRHLNM77110, 2N7609U8
Pre-Irradiation
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
BOTTOM 2.25V
100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
BOTTOM 2.25V
TOP
10
2.25V
1
1
0.1
0.1
2.25V
60
µ
s PULSE WIDTH, Tj = 25°C
1
10
100
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 6.5A
1.5
ID, Drain-to-Source Current (A)
10
T J = 150°C
1.0
T J = 25°C
1
VDS = 50V
60µs PULSE WIDTH
15
0.1
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
0.5
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHLNM77110, 2N7609U8
RDS(on), Drain-to -Source On Resistance (Ω)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
ID = 6.5A
RDS(on), Drain-to -Source On Resistance (Ω)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10 12 14 16 18 20
Vgs = 4.5V
T J = 25°C
T J = 150°C
T J = 150°C
T J = 25°C
10
12
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
130
3.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.5
120
2.0
1.5
110
1.0
0.5
ID
ID
ID
ID
= 50µA
= 250µA
= 1.0mA
= 150mA
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
www.irf.com
5
