PD - 91331C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
Product Summary
Part Number Radiation Level
IRHM7160
100K Rads (Si)
IRHM3160
300K Rads (Si)
IRHM4160
600K Rads (Si)
IRHM8160
1000K Rads (Si)
R
DS(on)
0.045Ω
0.045Ω
0.045Ω
0.045Ω
REF: MIL-PRF-19500/663
®
RAD Hard HEXFET
TECHNOLOGY
IRHM7160
JANSR2N7432
100V, N-CHANNEL
I
D
QPL Part Number
35*A JANSR2N7432
35*A JANSF2N7432
35*A JANSG2N7432
35*A JANSH2N7432
TO-254AA
International Rectifiers RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
*Current limited by pin diameter
For footnotes refer to the last page
35*
35*
201
250
2.0
±20
500
35
25
7.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
g
www.irf.com
1
8/14/01
IRHM7160
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified)
Min
100
2.0
16
Electrical Characteristics
Parameter
Typ Max Units
0.107
6.8
0.045
4.0
25
250
100
-100
310
53
110
35
150
150
130
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID =35A
➃
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A
➃
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =35A
VDS = 50V
VDD = 50V, ID =35A
VGS =12V, RG = 2.35Ω
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires
internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5300
1600
350
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
35*
140
1.8
520
6.1
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 35A, VGS = 0V
➃
Tj = 25°C, IF = 35A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current limited by pin diameter
Thermal Resistance
Parameter
R thJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
0.50
48
0.21
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHM7160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
Min
100 K Rads(Si)
Max
4.0
100
-100
25
0.045
0.045
1.8
300 - 1000K Rads (Si)
Min
Max
Units
Units
V
nA
µA
Ω
Ω
V
Test Conditions
BV
DSS
V
/5 JD
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source"
➃
On-State Resistance (TO-3)
Static Drain-to-Source"
➃
On-State Resistance (TO-254AA)
Diode Forward Voltage"
➃
100
2.0
100
1.25
4.5
100
-100
25
0.062
0.062
1.8
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
V
GS
= 12V, I
D
=35A
V
GS
= 12V, I
D
=35A
V
GS
= 0V, IS = 35A
1. Part numbers IRHM7160 (JANSR2N7432)
2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
Energy
LET
MeV/(mg/cm ))
(MeV)
28
285
36.8
305
Range
43
39
µm)
100
100
V
DS(V)
@
V
GS
=0V @
V
GS
=-5V@
V
GS
=-10V@
V
GS
=-15V@
V
GS
=-20V
100
90
100
70
80
50
60
120
100
80
VDS
60
40
20
0
0
-5
-10
VGS
-15
-20
-25
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHM7160
Pre-Irradiation
1000
I
D
, Drain-to-Source Current (A)
100
10
5.0V
1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
5.0V
10
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 50A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
2.0
100
1.5
10
1.0
0.5
1
V DS = 50V
20µs PULSE WIDTH
5
6
7
8
9
10
11
12
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHM7160
10000
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 35A
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
6000
Ciss
12
4000
Coss
8
2000
4
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
280
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
100us
T
J
= 150
°
C
1ms
10
10
10ms
T
J
= 25
°
C
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
1
0.4
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
ADI参考电路
