PD - 91447A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
-60 Volt, 0.045Ω, RAD HARD HEXFET
Ω
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 3 X 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retain
identical
electrical specifica-
tions up to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also ca-
pable of surviving transient ionization pulses as high as 1 x
10
12
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Single Event Effect (SEE) testing of In-
ternational Rectifier P-Channel RAD HARD HEXFETs has
demonstrated immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the highest
quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
IRHNA9064
IRHNA93064
JANSR2N7424U
JANSF2N7424U
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHNA9064
IRHNA93064
BV
DSS
-60V
-60V
R
DS(on)
0.045Ω
0.045Ω
I
D
-48A
-48A
Features:
!
!
!
!
!
!
!
!
!
!
!
!
!
Radiation Hardened up to 3 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
"
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
#
Avalanche Current
"
Repetitive Avalanche Energy
"
Peak Diode Recovery dv/dt
$
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
-48
-30
-192
300
2.4
±20
500
-48
30
4.4
-55 to 150
Pre-Irradiation
IRHNA9064, IRHNA93064
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5 Sec.)
3.3 (typical)
g
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1
8/25/98
IRHNA9064, IRHNA93064 Devices
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-60
—
—
—
-2.0
18
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.055
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
2.8
—
—
0.045
0.048
-4.0
—
-25
-250
-100
100
300
70
91
35
150
200
200
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID =-30A
%
VGS = -12V, ID = -48A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -30A
%
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -48A
VDS = Max Rating x 0.5
VDD = -30V, ID = -48A,
RG = 2.35Ω
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
nA
nC
ns
nH
Measured from drain
Modified MOSFET symbol
lead, 6mm (0.25 in) from showing the internal induc-
package to center of die. tances.
Measured from source
lead, 6mm (0.25 in) from
package to source bond-
ing pad.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6700
2800
920
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
"
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-48
-192
-3.0
270
2.5
Test Conditions
Modified MOSFET symbol showing the integral
r v r ep nj n t o r c i i r
ees - ucin etfe.
A
V
ns
∝C
T
j
= 25°C, IS = -48A, VGS = 0V
%
Tj = 25°C, IF = -48A, di/dt
≤
100A/µs
VDD
≤
-50V
%
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PCboard
Min Typ Max
—
—
—
1.6
0.42
—
Units
°C/W
Test Conditions
Soldered to a 1” square copper-clad board
2
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IRHNA9064, IRHNA93064 Devices
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
IInternational Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier com
prises three radiation environments.
Every manufacturing lot is tested in a low dose rate (to-
tal dose) environment per MIL-STD-750, test method
1019 condition A. International Rectifier has imposed a
standard gate condition of -12 volts per note 5 and a V
DS
bias condition equal to 80% of the device rated voltage
per note 6. Pre- and post- irradiation limits of the de-
vices irradiated to 1 x 10
5
Rads (Si) are identical and
are presented in Table1,column1, IRHNA9064.Post-ir-
radiation limits of the devices irradiated to 3 x 10
5
Rads
(Si) are presented in Table 1, column 2, IRHNA93064.
The values in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 3 x 10
5
Rads (Si) the
only parametric limit change is V
GS(th)
maximum.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2). International Rectifier radia-
tion hardened P-Channel HEXFETs are considered
to be neutron-tolerant, as stated in MIL-PRF-19500
Group D.
International Rectifier radiation hardened P-Channel
HEXFETs have been characterized in heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
()
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage&%
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source&%
On-State Resistance One
Diode Forward Voltage&%
IRHNA9064 IRHNA93064
100K Rads (Si) 300K Rads (Si)
Units
Test Conditions
*
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
=-30A
TC = 25°C, IS = -48A,V
GS
= 0V
Min
-60
-2.0
—
—
—
—
—
Max
—
-4.0
-100
100
-25
.045
-3.0
Min
-60
-2.0
—
—
—
—
—
Max
—
-5.0
-100
100
-25
.045
-3.0
V
nA
µA
Ω
V
Table 2. High Dose Rate
&'
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Parameter
V
DSS
IPP
di/dt
L1
Drain-to-Source Voltage
Min Typ Max Min Typ Max
Units
Test Conditions
—
— -48 —
—
-48
V
Applied drain-to-source voltage during
gamma-dot
— -100 —
— -100 —
A
Peak radiation induced photo-current
— -800 —
— -160 — A/µsec Rate of rise of photo-current
0.1 —
— 0.8 —
—
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Cu
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
3x 10
5
Range
(µm)
~43
V
DS
Bias
(V)
-60
V
GS
Bias
(V)
5
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3
IRHNA9064, IRHNA93064 Devices
Pre-Irradiation
1000
-I
D
, Drain-to-Source Current (A)
100
-5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
-5.0V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
10
0.1
10
0.1
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -48A
-I
D
, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
T
J
= 25
°
C
T
J
= 150
°
C
100
10
5
6
7
8
V DS = -25V
20µs PULSE WIDTH
9
10
11
12
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
4
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRHNA9064, IRHNA93064 Devices
Pre-Irradiation
12000
10000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -48A
V
DS
=-48V
V
DS
=-30V
16
C, Capacitance (pF)
8000
Ciss
6000
12
8
4000
Coss
2000
4
Crss
1
10
100
0
0
0
50
100
150
FOR TEST CIRCUIT
SEE FIGURE 13
200
250
300
350
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
100
100
100us
T
J
= 150
°
C
1ms
T
J
= 25
°
C
10
10
10ms
1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
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Fig 8.
Maximum Safe Operating Area
5
