PD - 94211A
IRHQ57110
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ57110 100K Rads (Si)
IRHQ53110
IRHQ54110
300K Rads (Si)
600K Rads (Si)
R
DS(on)
0.27Ω
0.27Ω
0.27Ω
0.29Ω
I
D
4.6A
4.6A
4.6A
4.6A
100V, Quad N-CHANNEL
RAD-Hard HEXFET
™
®
4
#
TECHNOLOGY
IRHQ58110 1000K Rads (Si)
LCC-28
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
4.6
2.9
18.4
12
0.1
±20
47
4.6
1.2
6.1
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
0.89 (Typical)
g
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1
08/01/01
IRHQ57110
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
(Per Die)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
—
—
2.0
3.3
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.13
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
—
—
0.31
0.27
4.0
—
10
25
100
-100
13
4.0
3.9
20
24
32
90
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 4.6A
➃
VGS = 12V, ID = 2.9A
VDS = VGS, ID = 1.0mA
VDS > 15V, I DS = 2.9A
➃
VDS= 80V, VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 4.6A
VDS = 50V
VDD = 50V, ID = 4.6A,
VGS = 12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
371
108
3.0
—
—
—
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
4.6
18.4
1.2
173
863
Test Conditions
A
V
nS
nC
T
j
= 25°C, IS = 4.6A, VGS = 0V
➃
Tj = 25°C, IF = 4.6A, di/dt
≤
100A/µs
VDD
≤
25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
11.8
60
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Pre-Irradiation
IRHQ57110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
(Per Die)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-39)
Static Drain-to-Source
➃
On-State Resistance (LCC-28)
Diode Forward Voltage
➃
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
100
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.226
0.27
1.2
100
1.5
—
—
—
—
—
—
—
4.5
100
-100
25
0.246
0.29
1.2
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 80V, V
GS
=0V
V
GS
= 12V, I
D
= 2.9A
V
GS
= 12V, I
D
= 2.9A
V
GS
= 0V, I S = 4.6A
1. Part number IRHQ57110, IRHQ53110, IRHQ54110
2. Part number IRHQ58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Cu
Br
I
LET
MeV/(mg/cm
2
))
28.0
36.8
59.8
Energy
(MeV)
285
305
343
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
43.0
100
100
100
100
70
39.0
100
80
70
50
—
32.6
50
40
35
—
—
120
100
80
VDS
60
40
20
0
0
-5
-10
VGS
-15
-20
-25
Cu
Br
I
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ57110
Pre-Irradiation
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
5.0V
1
1
5.0V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
0.1
0.1
0.1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
D
= 4.6A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 150
°
C
10
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
5.0
V DS = 25V
20µs PULSE WIDTH
8.0
9.0
6.0
7.0
10.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHQ57110
800
V
GS
, Gate-to-Source Voltage (V)
600
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 4.6A
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
400
Ciss
C
oss
12
8
200
4
C
rss
0
1
10
100
0
0
4
FOR TEST CIRCUIT
SEE FIGURE 13
8
12
16
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
10
ID, Drain-to-Source Current (A)
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
1ms
10ms
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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