PD - 9.1640A
IRL6903S/L
Logic-Level Gate Drive
l
Advanced Process Technology
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Surface Mount (IRL6903S)
l
Low-profile through-hole (IRL6903L)
l
175°C Operating Temperature
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Fast Switching
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P-Channel
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Fully Avalanche Rated
Description
l
HEXFET
®
Power MOSFET
D
V
DSS
= -30V
R
DS(on)
= 0.011Ω
G
I
D
= -105A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6309L) is available for low-
profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-105
-74
-360
3.8
200
1.3
± 20
1000
-55
20
-5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
8/25/97
IRL6903S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.028 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.011
V
GS
= -10V, I
D
= -55A
Ω
––– 0.02
V
GS
= -4.5V, I
D
= -46A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -25V, I
D
= -65A
––– -25
V
DS
= 100V, V
GS
= 0V
µA
––– -250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
––– 100
V
GS
= -20V
nA
––– -100
V
GS
= 20V
––– 100
I
D
= -55A
––– 44
nC
V
DS
= -15V
––– 55
V
GS
= -4.5V, See Fig. 6 and 13
16 –––
V
DD
= -15V
130 –––
I
D
= -55A
88 –––
R
G
= 2.5Ω
150 –––
R
D
= 0.26Ω, See Fig. 10
Between lead,
7.5
nH
–––
and center of die contact
4400 –––
V
GS
= 0V
2000 –––
pF
V
DS
= -25V
590 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -105
showing the
A
G
integral reverse
––– ––– -360
p-n junction diode.
S
––– ––– -1.3
V
T
J
= 25°C, I
S
= -55A, V
GS
= 0V
––– 82 120
ns
T
J
= 25°C, I
F
= -55A
––– 170 260
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRL6903 data and test conditions
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
Starting T
J
= 25°C, L = 0.66mH
R
G
= 25Ω, I
AS
= -55A. (See Figure 12)
I
SD
≤
-55A, di/dt
≤
-130A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
IRL6903S/L
1000
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.0V
BOTTOM -2.5V
TOP
1000
-I
D
, Drain-to-Source Current (A)
100
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.0V
BOTTOM -2.5V
TOP
100
10
1
-2.5V
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
-2.5V
1
0.1
1
20µs PULSE WIDTH
T
J
= 175
°
C
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
I
D
= -91A
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
10
1.0
1
0.5
0.1
2
3
4
5
6
V DS = -25V
20µs PULSE WIDTH
7
8
9
10
0.0
-60 -40 -20 0
V
GS
= -10V
20 40 60 80 100 120 140 160 180
-V
GS
, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( ° C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRL6903S/L
8000
-V GS, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
Ciss
15
I
D
= -55A
V
DS
=-24V
V
DS
=-15V
12
C, Capacitance (pF)
6000
9
4000
Coss
6
2000
3
Crss
0
1
10
100
0
0
50
100
150
FOR TEST CIRCUIT
SEE FIGURE 13
200
250
300
VDS , Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
SD
, Reverse Drain Current (A)
-ID , Drain Current (A)
I
100
T
J
= 175
°
C
100us
10
100
T
J
= 25
°
C
1
1ms
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
10
1
T
C
= 25 ° C
T
J
= 175° C
Single Pulse
10
10ms
100
-V
SD
,Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRL6903S/L
120
LIMITED BY PACKAGE
105
V
DS
V
GS
R
G
R
D
D.U.T.
+
I D , Drain Current (A)
75
60
45
-
4.5V
≤ 1
µs
Pulse Width
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
30
15
0
25
50
75
100
125
150
175
t
d(on)
t
r
t
d(off)
t
f
V
GS
10%
TC , Case Temperature
( ° C)
90%
V
DS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
90
V
DD
