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IS43R16160F-5BLI

DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-60

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厂商名称:Integrated Silicon Solution ( ISSI )

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
TBGA, BGA60,9X12,40/32
Reach Compliance Code
compliant
Factory Lead Time
8 weeks
访问模式
FOUR BANK PAGE BURST
最长访问时间
0.7 ns
最大时钟频率 (fCLK)
200 MHz
I/O 类型
COMMON
交错的突发长度
2,4,8
JESD-30 代码
R-PBGA-B60
长度
13 mm
内存密度
268435456 bit
内存集成电路类型
DDR DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
60
字数
16777216 words
字数代码
16000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
16MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TBGA
封装等效代码
BGA60,9X12,40/32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE
峰值回流温度(摄氏度)
NOT SPECIFIED
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
2,4,8
最大待机电流
0.03 A
最大压摆率
0.22 mA
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
8 mm
文档预览
IS43/46R83200F
IS43/46R16160F
IS43/46R32800F
8Mx32, 16Mx16, 32Mx8
256Mb DDR SDRAM
FEATURES
• VDD and VDDQ: 2.5V ± 0.2V
• SSTL_2 compatible I/O
• Double-data rate architecture; two data transfers
per clock cycle
• Bidirectional, data strobe (DQS) is transmitted/
received with data, to be used in capturing data
at the receiver
• DQS is edge-aligned with data for READs and
centre-aligned with data for WRITEs
• Differential clock inputs (CK and CK)
• DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Four internal banks for concurrent operation
• Data Mask for write data. DM masks write data
at both rising and falling edges of data strobe
• Burst Length: 2, 4 and 8
• Burst Type: Sequential and Interleave mode
• Programmable CAS latency: 2, 2.5 and 3
• Auto Refresh and Self Refresh Modes
• Auto Precharge
• T
RAS
Lockout supported (t
RAP
= t
RCD
)
OCTOBER 2016
DEVICE OVERVIEW
ISSI’s 256-Mbit DDR SDRAM achieves high speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 268,435,456-bit memory
array is internally organized as four banks of 64Mb to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 8-bit, 16-bit and 32-bit data word size
Input data is registered on the I/O pins on both edges
of Data Strobe signal(s), while output data is referenced
to both edges of Data Strobe and both edges of CLK.
Commands are registered on the positive edges of CLK.
An Auto Refresh mode is provided, along with a Self
Refresh mode. All I/Os are SSTL_2 compatible.
ADDRESS TABLE
Parameter
Configuration
8M x 32
2M x 32 x 4
banks
16M x 16
4M x 16 x 4
banks
BA0, BA1
A10/AP
32M x 8
8M x 8 x 4
banks
BA0, BA1
A10/AP
Bank Address BA0, BA1
Pins
Autoprecharge A8/AP
Pins
Row Address
Column
Address
4K(A0 – A11)
512(A0 – A7,
A9)
8K(A0 – A12) 8K(A0 – A12)
512(A0 – A8)
1K(A0 – A9)
OPTIONS
• Configuration(s): 8Mx32, 16Mx16, 32Mx8
• Package(s):
144 Ball BGA (x32)
66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16)
• Lead-free package available
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Automotive, A1 (-40°C to +85°C)
Automotive, A2 (-40°C to +105°C)
Refresh Count
Com./Ind./A1
4K / 64ms
A2
4K / 16ms
8K / 64ms
8K / 16ms
8K / 64ms
KEY TIMING PARAMETERS
Speed Grade
F
Ck
Max CL = 3
F
Ck
Max CL = 2.5
F
Ck
Max CL = 2
-5
200
167
133
-6
167
167
133
Units
MHz
MHz
MHz
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
1
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
FUNCTIONAL BLOCK DIAGRAM (
x
32)
CK
CK
CKE
CS
RAS
CAS
WE
COMMAND
DECODER
&
CLOCK
GENERATOR
Mode Registers and
Ext. Mode Registers
DATA IN
BUFFER
32
32
4
DM0-DM3
REFRESH
CONTROLLER
I/O 0-31
4
DQS0-DQS3
SELF
REFRESH
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
14
CONTROLLER
32
DATA OUT
BUFFER
V
DD
/V
DDQ
V
ss
/V
ss
Q
32
REFRESH
COUNTER
2
4096
4096
4096
4096
12
ROW DECODER
MULTIPLEXER
12
MEMORY CELL
ARRAY
12
ROW
ADDRESS
LATCH
12
12
ROW
ADDRESS
BUFFER
BANK 0
SENSE AMP I/O GATE
2
COLUMN
ADDRESS LATCH
9
512
(x 32)
BANK CONTROL LOGIC
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
9
2
Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
FUNCTIONAL BLOCK DIAGRAM (
x
16)
CK
CK
CKE
CS
RAS
CAS
WE
COMMAND
DECODER
&
CLOCK
GENERATOR
Mode Registers and
Ext. Mode Registers
DATA IN
BUFFER
16
16
2
LDM, UDM
REFRESH
CONTROLLER
I/O 0-15
2
LDQS, UDQS
SELF
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
REFRESH
15
CONTROLLER
16
DATA OUT
BUFFER
V
DD
/V
DDQ
V
ss
/V
ss
Q
16
REFRESH
COUNTER
2
8192
8192
8192
8192
13
ROW DECODER
MULTIPLEXER
13
MEMORY CELL
ARRAY
13
ROW
ADDRESS
LATCH
13
13
ROW
ADDRESS
BUFFER
BANK 0
SENSE AMP I/O GATE
2
COLUMN
ADDRESS LATCH
9
512
(x 16)
BANK CONTROL LOGIC
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
9
Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
3
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PIN CONFIGURATIONS
66 pin TSOP - Type II for x8
V
DD
DQ0
V
DD
Q
NC
DQ1
V
SS
Q
NC
DQ2
V
DD
Q
NC
DQ3
V
SS
Q
NC
NC
V
DDQ
NC
NC
VDD
NC
NC
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
V
SS
DQ7
V
SS
Q
NC
DQ6
V
DD
Q
NC
DQ5
V
SS
Q
NC
DQ4
V
DD
Q
NC
NC
V
SSQ
DQS
NC
VREF
VSS
DM
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
PIN DESCRIPTION: x8
A0-A12
A0-A9
BA0, BA1
DQ0 – DQ7
CK, CK
CKE
CS
CAS
RAS
WE
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Column Address Strobe
Command
Row Address Strobe
Command
Write Enable
DM
DQS
VDD
VDDQ
VSS
VSSQ
VREF
NC
Data Write Mask
Data Strobe
Power
Power Supply for I/O Pins
Ground
Ground for I/O Pins
SSTL_2 reference voltage
No Connection
4
Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
IS43/46R83200F
IS43/46R16160F, IS43/46R32800F
PIN CONFIGURATION
Package Code B: 60-ball FBGA (top view) for x8
(8mm x 13mm Body, 0.8mm Ball Pitch)
Top View
(Balls seen through the Package)
: Ball Existing
: Depopulated Ball
Top View(See the balls through the Package)
1 2 3
4 5 6
7 8 9
A
B
C
D
E
F
G
H
J
K
L
M
1
VSSQ
NC
NC
NC
NC
VREF
2
DQ7
VDDQ
VSSQ
VDDQ
VSSQ
VSS
CK
A12
A11
A8
A6
A4
3
VSS
DQ6
DQ5
DQ4
DQS
DM
CK
CKE
A9
A7
A5
VSS
A
B
C
D
E
F
G
H
J
K
L
M
7
VDD
DQ1
DQ2
DQ3
NC
NC
WE
RAS
BA1
A0
A2
VDD
8
DQ0
VSSQ
VDDQ
VSSQ
VDDQ
VDD
CAS
CS
BA0
A10/AP
A1
A3
9
VDDQ
NC
NC
NC
NC
NC
BGA Package Ball Pattern
Top View
x 8 Device Ball Pattern
PIN DESCRIPTION: x8
A0-A12
A0-A9
BA0, BA1
DQ0 – DQ7
CK, CK
CKE
CS
CAS
RAS
WE
DM
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Column Address Strobe
Command
Row Address Strobe Command
Write Enable
Data Write Mask
DQS
VDD
VDDQ
VSS
VSSQ
VREF
NC
Data Strobe
Power
Power Supply for I/O Pins
Ground
Ground for I/O Pins
SSTL_2 reference voltage
No Connection
Integrated Silicon Solution, Inc.
Rev. B
10/18/2016
5
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参数对比
与IS43R16160F-5BLI相近的元器件有:IS43R16160F-5BL、IS46R16160F-5BLA1、IS43R83200F-6TL-TR。描述及对比如下:
型号 IS43R16160F-5BLI IS43R16160F-5BL IS46R16160F-5BLA1 IS43R83200F-6TL-TR
描述 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-60 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-60 DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-60 IC SDRAM 256MBIT 166MHZ 66TSOP
是否Rohs认证 符合 符合 符合 符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
包装说明 TBGA, BGA60,9X12,40/32 TBGA, BGA60,9X12,40/32 TBGA, BGA60,9X12,40/32 TSOP2,
Reach Compliance Code compliant compliant compliant compli
Factory Lead Time 8 weeks 8 weeks 10 weeks 8 weeks
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 0.7 ns 0.7 ns 0.7 ns 0.7 ns
JESD-30 代码 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PDSO-G66
长度 13 mm 13 mm 13 mm 22.22 mm
内存密度 268435456 bit 268435456 bit 268435456 bit 268435456 bi
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 16 16 16 8
功能数量 1 1 1 1
端口数量 1 1 1 1
端子数量 60 60 60 66
字数 16777216 words 16777216 words 16777216 words 33554432 words
字数代码 16000000 16000000 16000000 32000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C
组织 16MX16 16MX16 16MX16 32MX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TBGA TBGA TBGA TSOP2
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES
最大供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
端子形式 BALL BALL BALL GULL WING
端子节距 1 mm 1 mm 1 mm 0.65 mm
端子位置 BOTTOM BOTTOM BOTTOM DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 8 mm 8 mm 8 mm 10.16 mm
最大时钟频率 (fCLK) 200 MHz 200 MHz 200 MHz -
I/O 类型 COMMON COMMON COMMON -
交错的突发长度 2,4,8 2,4,8 2,4,8 -
输出特性 3-STATE 3-STATE 3-STATE -
封装等效代码 BGA60,9X12,40/32 BGA60,9X12,40/32 BGA60,9X12,40/32 -
连续突发长度 2,4,8 2,4,8 2,4,8 -
最大待机电流 0.03 A 0.03 A 0.03 A -
最大压摆率 0.22 mA 0.22 mA 0.22 mA -
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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