DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84
厂商名称:Integrated Silicon Solution ( ISSI )
器件标准:
下载文档型号 | IS46DR16160A-37CBLA1 | IS43DR83200A-37CBLI | IS46DR16160A-5BBLA1 | IS46DR16160A-5BBLA2 | IS43DR83200A-37CBI | IS43DR83200A-3DBLI | IS46DR16160A-37CBA1 |
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描述 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | DDR DRAM, 32MX8, 0.5ns, CMOS, PBGA60, 8 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-60 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | DDR DRAM, 32MX8, 0.5ns, CMOS, PBGA60, 8 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TWBGA-60 | DDR DRAM, 32MX8, 0.45ns, CMOS, PBGA60, 8 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-60 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TWBGA-84 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 不符合 | 符合 | 不符合 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | TFBGA, BGA84,9X15,32 | TFBGA, BGA60,9X11,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA60,9X11,32 | TFBGA, BGA60,9X11,32 | 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TWBGA-84 |
针数 | 84 | 60 | 84 | 84 | 60 | 60 | 84 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compli | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 0.5 ns | 0.5 ns | 0.6 ns | 0.6 ns | 0.5 ns | 0.45 ns | 0.5 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 266 MHz | 266 MHz | 200 MHz | 200 MHz | 266 MHz | 333 MHz | 266 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
JESD-30 代码 | R-PBGA-B84 | R-PBGA-B60 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B84 |
长度 | 12.5 mm | 10.5 mm | 12.5 mm | 12.5 mm | 10.5 mm | 10.5 mm | 12.5 mm |
内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bi | 268435456 bi |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 16 | 8 | 16 | 16 | 8 | 8 | 16 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 84 | 60 | 84 | 84 | 60 | 60 | 84 |
字数 | 16777216 words | 33554432 words | 16777216 words | 16777216 words | 33554432 words | 33554432 words | 16777216 words |
字数代码 | 16000000 | 32000000 | 16000000 | 16000000 | 32000000 | 32000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 105 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 16MX16 | 32MX8 | 16MX16 | 16MX16 | 32MX8 | 32MX8 | 16MX16 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
封装等效代码 | BGA84,9X15,32 | BGA60,9X11,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA60,9X11,32 | BGA60,9X11,32 | BGA84,9X15,32 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | YES | YES | YES | YES | YES | YES | YES |
连续突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
最大待机电流 | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A |
最大压摆率 | 0.27 mA | 0.27 mA | 0.21 mA | 0.21 mA | 0.27 mA | 0.33 mA | 0.27 mA |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - | 不含铅 | 含铅 |
厂商名称 | Integrated Silicon Solution ( ISSI ) | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
Factory Lead Time | 12 weeks | - | 12 weeks | 12 weeks | 12 weeks | 12 weeks | 16 weeks |
JESD-609代码 | e1 | e1 | e1 | e1 | - | e1 | e0 |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | - | 260 | NOT SPECIFIED |
筛选级别 | AEC-Q100 | - | AEC-Q100 | AEC-Q100 | - | - | AEC-Q100 |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | - | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) |
处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | - | 40 | NOT SPECIFIED |