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IS61C256AH

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

• High-speed access time: 10, 12, 15, 20 ns

• Low active power: 400 mW (typical)

• Low standby power

— 250 µW (typical) CMOS standby

— 55 mW (typical) TTL standby

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 5V power supply

ISSI

JULY 2002

DESCRIPTION

The

ISSI

IS61C256AH is a very high-speed, low power,

32,768 word by 8-bit static RAMs. They are fabricated using

ISSI

's high-performance CMOS technology. This highly

reliable process coupled with innovative circuit design

techniques, yields access times as fast as 10 ns maximum.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 250 µW (typical) with CMOS input levels.

Easy memory expansion is provided by using an active

LOW Chip Enable (CE) input and an active LOW Output

Enable (OE) input. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

The IS61C256AH is pin compatible with other 32K x 8

SRAMs and are available in 28-pin SOJ and TSOP (Type I)

packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

DECODER

32K X 8

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

ISSI reserves the right to make changes this specification herein and it products at any time without notice. ISSI assumes no responsibility or liability arising out of the application or use of any information,

product or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

SR020-1P

07/17/2002

IS61C256AH

PIN CONFIGURATION

28-Pin SOJ

A14

A12

I/O0

I/O1

I/O2

GND

VCC

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

ISSI

PIN CONFIGURATION

28-Pin TSOP

A11

A13

VCC

A14

A12

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

PIN DESCRIPTIONS

A0-A14

I/O0-I/O7

Vcc

GND

Address Inputs

Chip Enable Input

Output Enable Input

Write Enable Input

Bidirectional Ports

Power

Ground

TRUTH TABLE

Mode

I/O Operation Vcc Current

High-Z

OUT

, I

Not Selected

(Power-down)

Output Disabled H

Read

Write

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

TERM

BIAS

STG

OUT

Parameter

Terminal Voltage with Respect to GND

Temperature Under Bias

Storage Temperature

Power Dissipation

DC Output Current (LOW)

Value

–0.5 to +7.0

–55 to +125

–65 to +150

1.5

Unit

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

SR020-1P

07/17/02

IS61C256AH

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

Speed

-10, -12

-15, -20

-12

-15, -20

5V ± 5%

5V ± 10%

5V ± 5%

5V ± 10%

ISSI

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol Parameter

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

(1)

Input Leakage

Output Leakage

GND - V

- V

GND - V

OUT

- V

Outputs Disabled

Com.

Ind.

Com.

Ind.

Test Conditions

= Min., I

= –4.0 mA

= Min., I

= 8.0 mA

Min.

2.4

—

2.2

–0.5

–5

–10

–5

–10

Max.

—

0.4

+ 0.5

0.8

Unit

µA

Note:

1. V

= –3.0V for pulse width less than 10 ns.

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

Symbol

Parameter

Vcc Dynamic Operating

Supply Current

TTL Standby Current

(TTL Inputs)

CMOS Standby

Current (CMOS Inputs)

Test Conditions

= Max.,

= V

OUT

= 0 mA, f = f

MAX

= Max.,

= V

or V

• V

, f = 0

= Max.,

• V

– 0.2V,

• V

– 0.2V, or

- 0.2V, f = 0

Com.

Ind.

Com.

Ind.

Com.

Ind.

-10

-12

-15

-20

Min. Max. Min. Max. Min. Max. Min. Max.

—

165

—

155

165

—

145

155

—

135

145

Unit

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

SR020-1P

07/17/02

IS61C256AH

CAPACITANCE

(1,2)

Symbol

OUT

Parameter

Input Capacitance

Output Capacitance

Conditions

= 0V

OUT

= 0V

Max.

Unit

ISSI

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

= 25°C, f = 1 MHz, Vcc = 5.0V.

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

Symbol

Parameter

Read Cycle Time

Address Access Time

Output Hold Time

Access Time

to Low-Z Output

to High-Z Output

to Low-Z Output

to High-Z Output

to Power-Up

to Power-Down

-10 ns

Min. Max

—

-12 ns

Min.

Max.

—

-15 ns

Min.

Max.

—

-20 ns

Min.

Max.

—

Unit

OHA

ACE

DOE

LZOE

(2)

HZOE

(2)

LZCE

(2)

HZCE

(2)

(3)

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V

and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. Not 100% tested.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Levels

Output Load

Unit

0V to 3.0V

3 ns

1.5V

See Figures 1 and 2

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

SR020-1P

07/17/02

IS61C256AH

AC TEST LOADS

480

Ω

480

Ω

ISSI

OUTPUT

30 pF

Including

jig and

scope

255

Ω

OUTPUT

5 pF

Including

jig and

scope

255

Ω

Figure 1

Figure 2

AC WAVEFORMS

READ CYCLE NO. 1

(1,2)

ADDRESS

OHA

OUT

PREVIOUS DATA VALID

OHA

DATA VALID

READ1.eps

READ CYCLE NO. 2

(1,3)

ADDRESS

OHA

DOE

HZOE

LZOE

ACE

LZCE

HZCE

DATA VALID

CE_RD2.eps

OUT

HIGH-Z

Notes:

is HIGH for a Read Cycle.

2. The device is continuously selected.

OE, CE

= V

3. Address is valid prior to or coincident with

LOW transitions.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

SR020-1P

07/17/02

参数对比

与IS61C256AH-12J相近的元器件有：IS61C256AH-12JI、IS61C256AH-20TI、IS61C256AH-20T、IS61C256AH-15TI、IS61C256AH-20J、IS61C256AH-12TI、IS61C256AH-15J。描述及对比如下：

型号	IS61C256AH-12J	IS61C256AH-12JI	IS61C256AH-20TI	IS61C256AH-20T	IS61C256AH-15TI	IS61C256AH-20J	IS61C256AH-12TI	IS61C256AH-15J
描述	Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, TSOP1-28	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, TSOP1-28	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, TSOP1-28	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, TSOP1-28	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	SOJ	SOJ	TSOP	TSOP	TSOP	SOJ	TSOP	SOJ
包装说明	0.300 INCH, PLASTIC, SOJ-28	0.300 INCH, PLASTIC, SOJ-28	TSOP1-28	TSOP1-28	TSOP1-28	0.300 INCH, PLASTIC, SOJ-28	TSOP1-28	0.300 INCH, PLASTIC, SOJ-28
针数	28	28	28	28	28	28	28	28
Reach Compliance Code	compliant	compliant	unknown	unknown	compliant	unknown	compli	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	3A991	EAR99	EAR99
最长访问时间	12 ns	12 ns	20 ns	20 ns	15 ns	20 ns	12 ns	15 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-J28	R-PDSO-J28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-J28	R-PDSO-G28	R-PDSO-J28
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	18.161 mm	18.161 mm	11.8 mm	11.8 mm	11.8 mm	18.161 mm	11.8 mm	18.161 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bi	262144 bi
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	85 °C	70 °C	85 °C	70 °C	85 °C	70 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES	YES
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOJ	SOJ	TSOP1	TSOP1	TSOP1	SOJ	TSOP1	SOJ
封装等效代码	SOJ28,.34	SOJ28,.34	TSSOP28,.53,22	TSSOP28,.53,22	TSSOP28,.53,22	SOJ28,.34	TSSOP28,.53,22	SOJ28,.34
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	NOT SPECIFIED	240	NOT SPECIFIED	240	240	240	240
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.556 mm	3.556 mm	1.2 mm	1.2 mm	1.2 mm	3.556 mm	1.2 mm	3.556 mm
最大待机电流	0.002 A	0.01 A	0.01 A	0.002 A	0.01 A	0.002 A	0.01 A	0.002 A
最小待机电流	4.75 V	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V	4.75 V	4.5 V
最大压摆率	0.155 mA	0.165 mA	0.145 mA	0.135 mA	0.155 mA	0.135 mA	0.165 mA	0.145 mA
最大供电电压 (Vsup)	5.25 V	5.25 V	5.5 V	5.5 V	5.5 V	5.5 V	5.25 V	5.5 V
最小供电电压 (Vsup)	4.75 V	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V	4.75 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	J BEND	J BEND	GULL WING	GULL WING	GULL WING	J BEND	GULL WING	J BEND
端子节距	1.27 mm	1.27 mm	0.55 mm	0.55 mm	0.55 mm	1.27 mm	0.55 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	10	NOT SPECIFIED	30	NOT SPECIFIED	30	10	30	10
宽度	7.59 mm	7.59 mm	8 mm	8 mm	8 mm	7.59 mm	8 mm	7.59 mm
厂商名称	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )