512K X 32 STANDARD SRAM, 10 ns, PBGA90
512K × 32 标准存储器, 10 ns, PBGA90
器件类别:存储
厂商名称:ISSI(芯成半导体)
厂商官网:http://www.issi.com/
下载文档型号 | IS64WV51232BLL-10BA3 | IS61WV51232ALL | IS61WV51232ALL-20BI | IS61WV51232ALS | IS61WV51232BLL | IS61WV51232BLL-10BI | IS61WV51232BLS | IS64WV51232BLL | IS64WV51232BLS |
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描述 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 | 512K X 32 STANDARD SRAM, 10 ns, PBGA90 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 90 | 90 | 90 | 90 | 90 | 90 | 90 | 90 | 90 |
最小工作温度 | -40 Cel | -40 Cel | -40 Cel | -40 Cel | -40 Cel | -40 Cel | -40 Cel | -40 Cel | -40 Cel |
最大工作温度 | 125 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel |
额定供电电压 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
最小供电/工作电压 | 2.4 V | 2.4 V | 2.4 V | 2.4 V | 2.4 V | 2.4 V | 2.4 V | 2.4 V | 2.4 V |
最大供电/工作电压 | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
加工封装描述 | 8 X 13 MM, 0.80 MM PITCH, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 | 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90 |
状态 | Active-Unconfirmed | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
存储密度 | 1.68E7 bit | 1.68E7 deg | 1.68E7 deg | 1.68E7 deg | 1.68E7 deg | 1.68E7 deg | 1.68E7 deg | 1.68E7 deg | 1.68E7 deg |
内存IC类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
操作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
组织 | 512KX32 | 512K X 32 | 512K X 32 | 512K X 32 | 512K X 32 | 512K X 32 | 512K X 32 | 512K X 32 | 512K X 32 |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
包装尺寸 | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH |
串行并行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
表面贴装 | YES | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
工艺 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | AUTOMOTIVE | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子涂层 | TIN LEAD | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子间距 | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
位数 | 512K | 512K | 512K | 512K | 512K | 512K | 512K | 512K | 512K |
最大存取时间 | - | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns |
无铅 | - | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
欧盟RoHS规范 | - | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |