without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
1
IS65WV25616ALL, IS65WV25616BLL
44-Pin mini TSOP (Type II)
(Package Code T)
PIN DESCRIPTIONS
A0-A17
I/O0-I/O15
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A17
ISSI
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
CS1
OE
WE
LB
UB
NC
V
DD
GND
®
25616T.eps
TRUTH TABLE
Mode
Not Selected
WE
X
X
X
H
H
H
H
H
L
L
L
CS1
H
X
X
L
L
L
L
L
L
L
L
OE
X
X
X
H
H
L
L
L
X
X
X
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
Output Disabled
Read
Write
I
CC
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
IS65WV25616ALL, IS65WV25616BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
DD
+0.3
–0.2 to V
DD
+0.3
–65 to +150
1.0
Unit
V
V
°C
W
ISSI
®
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE (V
DD
)
Range
A1
A2
A3
Ambient Temperature
-40°C to +85°C
–40°C to +105°C
–40°C to +125°C
IS65WV25616ALL
1.65V - 2.2V
1.65V - 2.2V
1.65V - 2.2V
IS65WV25616BLL
2.5V-3.6V
2.5V-3.6V
2.5V-3.6V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OH
= -1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
DD
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–2
–2
Max.
—
—
0.2
0.4
V
DD
+ 0.2
V
DD
+ 0.3
0.4
0.6
2
2
Unit
V
V
V
V
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
3
IS65WV25616ALL, IS65WV25616BLL
IS65WV25616ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
CC
1
Parameter
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, f = 1 MH
Z
OR
ULB Control
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
,
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
A1
A2
A3
15
30
50
µA
A1
A2, A3
A1
A2, A3
A1
A2, A3
Max.
70
25
30
10
15
0.5
0.6
Unit
mA
mA
ISSI
®
I
SB
1
mA
IS65WV25616BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
CC
1
Parameter
Vdd Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V
WE
= V
DD
-0.2V,
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, f = 1 MH
Z
OR
A1
A2, A3
A1
A2, A3
A1
A2, A3
Max.
55
40
—
15
—
0.45
—
Max.
70
—
40
—
20
—
0.45
Unit
mA
mA
I
SB
1
mA
ULB Control
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
A1
CS1
≥
V
DD
– 0.2V,
A2
V
IN
≥
V
DD
– 0.2V, or
A3
V
IN
≤
0.2V, f = 0
OR
V
DD
= Max.,
CS1
= V
IL
,
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
20
—
—
—
55
90
µA
ULB Control
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
IS65WV25616ALL, IS65WV25616BLL
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
ISSI
®
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
IS65WV25616ALL
(Unit)
0.4V to V
DD
-0.2V
5 ns
V
REF
See Figures 1 and 2
IS65WV25616BLL
(Unit)
0.4V to V
DD
-0.3V
5ns
V
REF
See Figures 1 and 2
IS65WV25616ALL
1.65V-2.2V
R1(Ω)
Ω)
R2(Ω)
Ω)
V
REF
V
TM
3070
3150
0.9V
1.8V
IS65WV25616BLL
2.5V - 3.6V
3070
3150
1.5V
2.8V
AC TEST LOADS
R1
VTM
VTM
R1
OUTPUT
30 pF
Including
jig and
scope
R2
OUTPUT
5 pF
Including
jig and
scope
R2
62WV5126ALL tst1a.eps
25616l_tst1c.eps
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com —
