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ISL6614BIR

Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

厂商名称:Intersil ( Renesas )

厂商官网:http://www.intersil.com/cda/home/

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DATASHEET
ISL6614B
Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
The ISL6614B integrates two ISL6613B MOSFET drivers
and is specifically designed to drive two Channel MOSFETs
in a synchronous rectified buck converter topology. This
driver combined with HIP63xx or ISL65xx Multi-Phase Buck
PWM controllers and N-Channel MOSFETs forms complete
core-voltage regulator solutions for advanced
microprocessors.
The ISL6614B features 7V rising threshold and drives both
the upper and lower gates simultaneously over a range from
5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses. This driver is
optimized for POL DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during start-up.
The ISL6614B also features a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
FN9206
Rev.3.00
May 5, 2008
Features
• Pin-to-pin Compatible with HIP6602 SOIC Family
• Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
• Low VCC Rising Threshold (7V) for IBA Applications
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves
PCB Efficiency and has a Thinner Profile
• Pb-free Available (RoHS compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel
®
and AMD
®
Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief 400 and 417 for Power Train Design,
Layout Guidelines, and Feedback Compensation Design
FN9206 Rev.3.00
May 5, 2008
Page 1 of 11
ISL6614B
Pinouts
ISL6614BCB, ISL6614BCBZ, ISL6614BIB, ISL6614BIBZ
(14 LD SOIC)
TOP VIEW
PWM1
PWM2
GND
LGATE1
PVCC
PGND
LGATE2
1
2
3
4
5
6
7
14 VCC
13 PHASE1
12 UGATE1
11 BOOT1
10 BOOT2
9 UGATE2
8 PHASE2
LGATE1
2
GND
PVCC 3
PGND 4
5
NC
6
LGATE2
7
PHASE2
8
NC
10 BOOT2
9
UGATE2
11 BOOT1
GND 1
ISL6614BCR, ISL6614BCRZ, ISL6614BIR, ISL6614RBIRZ
(16 LD QFN)
TOP VIEW
PHASE1
13
12 UGATE1
PWM2
PWM1
15
VCC
14
16
Ordering Information
PART NUMBER
ISL6614BCB*
ISL6614BCBZ* (Note)
ISL6614BCR*
ISL6614BCRZ* (Note)
ISL6614BIB*
ISL6614BIBZ* (Note)
ISL6614BIR*
ISL6614BIRZ* (Note)
PART MARKING
6614BCB
6614BCBZ
66 14BCR
66 14BCRZ
6614BIB
6614BIBZ
66 14BIR
66 14BIRZ
TEMP. RANGE (°C)
0 to +85
0 to +85
0 to +85
0 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +85
PACKAGE
14 Ld SOIC
14 Ld SOIC (Pb-free)
16 Ld 4x4 QFN
16 Ld 4x4 QFN (Pb-free)
14 Ld SOIC
14 Ld SOIC (Pb-free)
16 Ld 4x4 QFN
16 Ld 4x4 QFN (Pb-free)
PKG. DWG. #
M14.15
M14.15
L16.4x4
L16.4x4
M14.15
M14.15
L16.4x4
L16.4x4
*Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications.
NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100%
matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J
STD-020.
FN9206 Rev.3.00
May 5, 2008
Page 2 of 11
ISL6614B
Block Diagram
PVCC
VCC
+5V
PRE-POR OVP
FEATURES
SHOOT-
THROUGH
PROTECTION
BOOT1
UGATE1
PHASE1
CHANNEL 1
10k
PWM1
8k
PVCC
LGATE1
PGND
+5V
CONTROL
LOGIC
PGND
BOOT2
UGATE2
PVCC
10k
PWM2
8k
GND
SHOOT-
THROUGH
PROTECTION
PHASE2
CHANNEL 2
PVCC
LGATE2
PGND
PAD
FOR ISL6614BCR, THE PAD ON THE BOTTOM SIDE OF
THE QFN PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
FN9206 Rev.3.00
May 5, 2008
Page 3 of 11
ISL6614B
Typical Application - 4 Channel Converter Using ISL65xx and ISL6614B Gate Drivers
7V TO 12V
BOOT1
+12V
UGATE1
VCC
PHASE1
LGATE1
+5V
DUAL
DRIVER
ISL6614B
FB
VSEN
COMP
VCC
UGATE2
ISEN1
PGOOD
EN
PWM1
PWM2
MAIN ISEN2
CONTROL
ISL65xx
PWM1
PWM2
LGATE2
PHASE2
PVCC
5V TO 12V
BOOT2
+12V
VID
GND
PGND
+V
CORE
ISEN3
FS/DIS
PWM3
PWM4
GND
ISEN4
UGATE1
VCC
PHASE1
7V TO 12V
BOOT1
+12V
LGATE1
DUAL
DRIVER
ISL6614B
PVCC
5V TO 12V
BOOT2
+12V
UGATE2
PWM1
PWM2
LGATE2
PHASE2
GND
PGND
FN9206 Rev.3.00
May 5, 2008
Page 4 of 11
ISL6614B
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V
DC
to V
BOOT
+ 0.3V
V
PHASE
- 3.5V (<100ns Pulse Width, 2µJ) to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to V
PVCC
+ 0.3V
GND - 5V (<100ns Pulse Width, 2µJ) to V
PVCC
+ 0.3V
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to 15V
DC
GND - 8V (<400ns, 20µJ) to 30V (<200ns, V
BOOT-GND
<36V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . Class I JEDEC STD
Thermal Information
Thermal Resistance (Typical) . . . . . . . . .
JA
(°C/W)
JC
(°C/W)
SOIC Package (Note 1) . . . . . . . . . . . .
90
N/A
QFN Package (Notes 2, 3). . . . . . . . . .
48
8.5
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V to 13.2V
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . 5V to 12V
10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1.
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air.
2.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
4. Limits should be considered typical and are not production tested.
Electrical Specifications
PARAMETER
VCC SUPPLY CURRENT
Bias Supply Current
Gate Drive Bias Current
Recommended Operating Conditions, Unless Otherwise Noted.
SYMBOL
I
VCC
I
PVCC
TEST CONDITIONS
f
PWM
= 300kHz, V
PVCC
= 12V
f
PWM
= 300kHz, V
PVCC
= 12V
0°C to +85°C
-40°C to +85°C
0°C to +85°C
-40°C to +85°C
I
PWM
V
PWM
= 5V
V
PWM
= 0V
V
CC
= 12V
V
CC
= 12V
V
CC
= 12V
V
CC
= 12V
V
CC
= 12V
V
CC
= 12V
V
CC
= 12V
t
TSSHD
t
RU
t
RL
t
FU
t
FL
t
PDHU
t
PDHL
t
PDLU
t
PDLL
t
PDTS
V
PVCC
= 12V, 3nF Load, 10% to 90%
V
PVCC
= 12V, 3nF Load, 10% to 90%
V
PVCC
= 12V, 3nF Load, 90% to 10%
V
PVCC
= 12V, 3nF Load, 90% to 10%
V
PVCC
= 12V, 3nF Load, Adaptive
V
PVCC
= 12V, 3nF Load, Adaptive
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
MIN
-
-
6.60
5.60
5.20
4.20
-
-
-
-
1.80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
7.1
9.7
6.9
-
5.4
-
500
-460
3.00
2.00
-
1.50
1.00
3.20
2.60
245
26
18
18
12
10
10
10
10
10
MAX
-
-
7.25
7.25
5.90
5.90
-
-
-
-
2.40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
mA
mA
V
V
V
V
µA
µA
V
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-ON RESET AND ENABLE
VCC Rising Threshold
VCC Rising Threshold
VCC Falling Threshold
VCC Falling Threshold
PWM INPUT (See “TIMING DIAGRAM” on page 7)
Input Current
PWM Rising Threshold
PWM Falling Threshold
Typical Three-State Shutdown Window
Three-State Lower Gate Falling Threshold
Three-State Lower Gate Rising Threshold
Three-State Upper Gate Rising Threshold
Three-State Upper Gate Falling Threshold
Shutdown Hold-off Time
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-On Propagation Delay (Note 4)
LGATE Turn-On Propagation Delay (Note 4)
UGATE Turn-Off Propagation Delay (Note 4)
LGATE Turn-Off Propagation Delay (Note 4)
LG/UG Three-State Propagation Delay (Note 4)
FN9206 Rev.3.00
May 5, 2008
Page 5 of 11
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