IT130A IT130 IT131 IT132
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT130 Series
Pin for Pin Compatible
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T
A
= 25°C unless otherwise noted)
I
C
Collector-Current
-10mA
-65°C to +150°C
-55°C to +150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3W/°C
C1
C2
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation T
A
=25°C
Linear Derating Factor
B1
E1
E2
B2
TOP VIEW
26 X 29 MILS
ELECTRICAL CHARACTERISTICS T
A
= 25°C (unless otherwise noted)
SYMBOL CHARACTERISTIC
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
V
CE
(SAT)
I
EBO
I
CBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
Collector Saturation Voltage
Emitter Cutoff Current
Collector Cutoff Current
Output Capacitance
4
4
IT130A IT130 IT131 IT132
-45
-45
-6.2
±60
200
225
-0.5
-1
-1
2
4
±500
110
3
-45
-45
-6.2
±60
200
225
-0.5
-1
-1
2
4
110
3
-45
-45
-6.2
±60
80
100
-0.5
-1
-1
2
4
90
3
-45
-45
-6.2
±60
80
100
-0.5
-1
-1
2
4
90
3
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS CONDITIONS
V
V
V
V
I
C
= -10µA I
E
= 0A
I
C
= -10µA I
B
= 0A
I
E
= -10µA I
C
= 0A
NOTE 2
I
CCO
= ±10µA I
B
= I
E
=0A
I
C
= -10µA V
CE
= -5V
I
C
= -1.0mA V
CE
= -5V
V
nA
nA
pF
pF
nA
MHz
dB
I
C
= -0.5mA I
B
= -0.05mA
I
C
= 0A
I
E
= 0A
I
E
= 0A
V
CC
= 0V
V
CC
= ±60V, I
B
= I
E
=0A
I
C
= -1mA
V
CE
= -5V
I
C
= -100µA V
CE
= -5V
BW = 200Hz, R
G
= 10 KΩ
f=1KHz
V
EB
= -3V
V
CB
= -45V
V
CB
= -5V
Collector to Collector Capacitance
Current Gain Bandwidth Product
Narrow Band Noise Figure
4
4
Collector to Collector Leakage Current
±500 ±500 ±500 MAX.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201157 9/27/2012 Rev#A5 ECN# IT130 IT130A IT131 IT132
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
│V
BE1
-V
BE2
│
CHARACTERISTIC
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
4
IT130A IT130 IT131 IT132
1
3
2.5
2
5
5
3
10
25
5
20
25
UNITS CONDITIONS
MAX. mV
MAX. µV/°C
MAX. nA
I
C
= -10 µA
I
C
= 10 µA
V
CE
= -5V
V
CE
= 5V
∆│(V
BE1
-V
BE2)
│/∆T Base Emitter Voltage Differential
│I
B1
-I
B2
│
T = -55°C to +125°C
I
C
= -10 µA V
CE
= -5V
C1
B1
0.210
0.170
C2
B2
E2
N/C
E1
N/C
C1
B1
E1
N/C
C2
B2
E2
N/C
Note: All Dimensions in inches
NOTES:
1.
2.
3.
4.
These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only.
Not a production test.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201157 9/27/2012 Rev#A5 ECN# IT130 IT130A IT131 IT132