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ITC1100

Transistor

器件类别:分立半导体    晶体管   

厂商名称:GHz Technology ( Microsemi )

厂商官网:http://www.advancedpower.com/

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器件:ITC1100

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器件参数
参数名称
属性值
包装说明
,
Reach Compliance Code
unknown
最大集电极电流 (IC)
80 A
配置
Single
最小直流电流增益 (hFE)
20
最高工作温度
200 °C
极性/信道类型
NPN
最大功率耗散 (Abs)
3400 W
Base Number Matches
1
文档预览
R.1.120799
ITC1100
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The
ITC1100
is a common base bipolar transistor. It is designed for pulsed
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
CASE OUTLINE
55SW, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation
1
@25°C (P
d
)
Thermal Resistance
1
JC
)
Voltage and Current
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
1
Temperatures
Storage Temperature
Operating Junction Temperature
1
3400 W
.08°C/W
65V
3.5V
80A
-40 to +150°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
BVebo
2
BVces
BVceo
2
h
FE2
CHARACTERISTICS
Emitter-Base Breakdown(open)
Collector-Emitter Breakdown(shorted)
Collector-Emitter Breakdown (open)
DC Current Gain
TEST
CONDITIONS
Ie=50mA
Ic=30mA
Ic=30mA
Ic=5A, Vce=5V
MIN
3.5
65
30
20
TYP
MAX
UNITS
V
V
V
β
100
FUNCTIONAL CHARACTERISTICS @ 25°C
G
PB
η
c
t
r
VSWR
Z
in
Z
out
1
2
Common Base Power Gain
Collector Efficiency
Rise Time
Output Load Mismatch
Series Input Impedance (Circuit
source impedance @ test cond.)
Series Output Impedance (Circuit
load impedance @ test cond.)
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1µS, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1µS, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1µS, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1µS, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1µS, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1µS, DF=1%
10
45
10.5
50
50
80
4:1
0.89 – j2.3
0.54 - j2.64
dB
%
nS
Ψ
At rated output power and pulse conditions
Not measurable due to EB Returns
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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