PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFA 12N80P
IXFH 12N80P
IXFP 12N80P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
800 V
12 A
1.1
Ω
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Tranisent
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 4
Ω
T
C
= 25°C
Maximum Ratings
800
800
±20
±30
12
36
12
30
1.2
10
360
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
TO-263 (IXFA)
G
S
(TAB)
TO-247 (IXFH)
(TAB)
TO-220 (IXFP)
W
°C
°C
°C
°C
°C
G
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
T0-220 & TO-263
(TO-220, TO-247)
300
250
D S
(TAB)
1.13/10 Nm/lb.in.
6
4
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
3.0
5.0
±100
25
250
1.1
V
V
nA
μA
μA
Ω
Advantages
Easy to mount
Space savings
High power density
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
© 2005 IXYS All rights reserved
DS99476E(10/05)
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
13
18
2800
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
210
19
21
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 5
Ω
(External)
22
62
22
51
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
13
19
0.35
(TO-247)
(TO-220)
0.21
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
K/W
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
TO-263 (IXFA) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 20 V; I
D
= 0.5 I
D25
, Note 1
Pins: 1 - Gate 2, 4 - Drain
3 - Source
Millimeter
Min.
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
rm
Test Conditions
V
GS
= 0 V
Repetitive
I
F
= I
S
, V
GS
= 0 V, Note 1
I
S
= 18 A, V
GS
= 0 V
-di/dt = 100 A/μs, V
R
= 100 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
12
36
1.5
200
1.0
250
A
A
V
ns
μC
TO-220 (IXFP) Outline
Note 1: Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
TO-247 (IXFH) Outline
Dim.
A
A
1
A
2
Millimeter
Min.
Max.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
3.55
5.89
4.32
6.15
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
BSC
Inches
Min.
Max.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.140
0.232
.170
242
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
BSC
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
b
b
1
b
2
C
D
E
e
L
L1
∅P
Q
R
S
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
Fig. 1. Output Characte r is tics
@ 25
º
C
12
V
GS
= 10V
10
7V
20
24
V
GS
= 10V
7V
Fig. 2. Exte nde d Output Char acte r is tics
@ 25
º
C
I
D
- Amperes
6V
6
I
D
- Amperes
8
16
12
6V
4
8
2
5V
0
0
2
4
6
8
10
12
4
5V
0
0
3
6
9
12
15
18
21
24
27
30
V
D S
- V olts
Fig. 3. Output Char acte r is tics
@ 125
º
C
12
V
GS
= 10V
10
7V
2.6
2.4
V
GS
= 10V
V
D S
- V olts
Fig. 4. R
DS(on
)
Norm alize d to 0.5 I
D25
V alue vs . Junction Te m pe r atur e
R
D S ( o n )
- Normalized
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I
D
= 6A
I
D
= 12A
I
D
- Amperes
8
6V
6
4
2
5V
0
0
4
8
12
16
20
24
-50
-25
0
25
50
75
100
125
150
V
D S
- V olts
Fig. 5. R
DS(on)
Nor m alize d to
0.5 I
D25
V alue vs . I
D
2.5
2.3
V
GS
= 10V
T
J
= 125
º
C
14
12
10
T
J
- Degrees Centigrade
Fig. 6. Dr ain Cur r e nt vs . Cas e
Te m pe r atur e
R
D S ( o n )
- Normalized
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0
2
4
6
8
10
12
I
D
- Amperes
T
J
= 25
º
C
14
16
18
20
22
24
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
I
D
- A mperes
T
C
- Degrees Centigrade
© 2005 IXYS All rights reserved
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
Fig. 7. Input Adm ittance
16
14
12
24
21
18
T
J
= -40
º
C
25
º
C
125
º
C
15
12
9
6
3
0
4
4.5
5
5.5
6
6.5
0
2
4
6
8
10
12
14
16
18
Fig. 8. Tr ans conductance
I
D
- Amperes
10
8
6
4
2
0
T
J
= 125
º
C
25
º
C
-40
º
C
V
G S
- V olts
Fig. 9. Sour ce Cur r e nt vs .
Sour ce -To-Dr ain V oltage
35
30
8
25
7
10
9
V
DS
= 400V
I
D
= 6A
I
G
= 10m A
g
fs
- Siemens
I
D
- A mperes
Fig. 10. Gate Char ge
I
S
- Amperes
V
G S
- Volts
T
J
= 25
º
C
0.9
1
1.1
20
T
J
= 125
º
C
15
10
5
6
5
4
3
2
1
0
0.4
0.5
0.6
0.7
0.8
0
0
5
10
15
20
G
25
30
35
40
45
50
55
V
S D
- V olts
Q
- nanoCoulombs
Fig. 11. Capacitance
10000
f = 1MH z
C iss
Capacitance - picoFarads
1000
C oss
100
C rss
10
0
5
10
15
20
25
30
35
40
V
D S
- V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFA 12N80P
IXFH 12N80P IXFP 12N80P
Fig. 12. Maximum Transient Thermal Resistance
1.000
R
( t h ) J C
-
º
C / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2005 IXYS All rights reserved
