Polar
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH170N10P
IXFK170N10P
V
DSS
I
D25
R
DS(on)
t
rr
= 100V
= 170A
≤
9mΩ
Ω
≤
150ns
TO-247 (IXFH)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
L(RMS)
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1M
Ω
Continuous
Transient
T
C
= 25°C
External Lead Current Limit
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25°C
Maximum Ratings
100
100
± 20
± 30
170
160
350
60
2
10
715
-55 to +175
+175
-55 to +175
V
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
G
G
D
S
Tab
TO-264 (IXFK)
D
S
Tab
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-247
TO-264
300
260
1.13/10
6
10
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
= ± 20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 15V, I
D
= 350A
Characteristic Values
Min.
Typ.
Max.
100
2.5
5.0
V
V
±100 nA
25
μA
500
μA
7
9 mΩ
mΩ
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS99380F(01/10)
IXFH170N10P
IXFK170N10P
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-247)
(TO-264)
0.21
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 60A
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
50
72
6000
2340
730
35
50
90
33
198
39
107
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.21 °C/W
°C/W
°C/W
e
1
2
3
TO-247 (IXFH) Outline
∅
P
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs,
V
R
= 50V, V
GS
= 0V
8.0
0.6
Characteristic Values
Min.
Typ.
Max.
170
350
1.5
150
A
A
V
ns
A
μC
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-264 AA ( IXFK) Outline
Back Side
1 =
2 =
3 =
Tab
Gate
Drain
Source
= Drain
Note 1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
7,157,338B2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH170N10P
IXFK170N10P
Fig. 1. Output Characteristics @ T
J
= 25ºC
180
V
GS
= 10V
160
140
9V
240
9V
280
320
V
GS
= 10V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
120
100
80
8V
200
160
120
80
8V
7V
60
40
6V
20
5V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
7V
40
0
0.0
0.5
1.0
1.5
2.0
2.5
6V
5V
3.0
3.5
4.0
4.5
5.0
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
180
V
GS
= 10V
160
9V
140
2.2
2.0
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 85A Value vs.
Junction Temperature
V
GS
= 10V
I
D
- Amperes
120
100
80
60
R
DS(on)
- Normalized
8V
1.8
1.6
1.4
1.2
1.0
I
D
= 170A
I
D
= 85A
7V
6V
40
20
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
5V
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 85A Value vs.
Drain Current
3.0
V
GS
= 10V
2.6
15V
- - - - -
180
160
Fig. 6. Maximum Drain Current vs.
Case Temperature
External Lead Current Limit
140
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
2.2
T
J
= 175ºC
120
100
80
60
40
20
1.8
1.4
1.0
0.6
0
50
100
150
200
250
300
350
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXFH170N10P
IXFK170N10P
Fig. 7. Input Admittance
320
280
240
T
J
= - 40ºC
25ºC
150ºC
100
120
T
J
= - 40ºC
Fig. 8. Transconductance
200
160
120
80
g
f s
- Siemens
I
D
- Amperes
80
25ºC
60
150ºC
40
20
40
0
3
4
5
6
7
8
9
10
0
0
40
80
120
160
200
240
280
320
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
10
9
300
8
250
T
J
= 25ºC
T
J
= 150ºC
7
V
DS
= 50V
I
D
= 85A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
150
V
GS
- Volts
6
5
4
3
2
100
50
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
20
40
60
80
100
120
140
160
180
200
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
R
DS(on)
Limit
DC
1ms
10ms
100µs
Capacitance - PicoFarads
10,000
1,000
Coss
I
D
- Amperes
10
T
J
= 175ºC
Ciss
100
Crss
T
C
= 25ºC
Single Pulse
1
100
0
5
10
15
20
25
30
35
40
1
10
100
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH170N10P
IXFK170N10P
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z
(th )J C
- ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_170N10P(8S)01-07-10-C
