Not for New Designs
HiPerFET
TM
Power MOSFETs
Q-Class
IXFH40N30Q
IXFT40N30Q
R
DS(on)
V
DSS
I
D25
= 300V
= 40A
≤
85mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
TO-268 (IXFT)
G
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
Maximum Ratings
300
300
±
20
±
30
40
160
40
1.0
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
G = Gate
S = Source
G
D
TO-247 (IXFH)
D (Tab)
S
D (Tab)
D
= Drain
Tab = Drain
T
C
= 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13 / 10
4
6
International Standard Packages
Low
Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
300
2.0
4.0
±100
V
V
nA
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
25
μA
1 mA
85 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2011 IXYS CORPORATION, All Rights Reserved
DS98504C(03/11)
IXFH40N30Q
IXFT40N30Q
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.25
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1.5Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
20
27
3560
640
170
20
35
40
12
92
22
38
140
35
70
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
°C/W
Terminals: 1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-268 Outline
0.42
°C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 40A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
8.00
0.85
Characteristic Values
Min.
Typ.
Max.
40
160
1.5
250
A
A
V
ns
A
μC
1
2
3
TO-247 Outline
∅
P
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
2.2
2.6
A
2
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH40N30Q
IXFT40N30Q
Fig. 1. Output Characteristics @ T
J
= 25ºC
40
35
30
V
GS
= 10V
8V
7V
120
V
GS
= 10V
9V
100
8V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
25
20
15
10
I
D
- Amperes
80
60
7V
40
6V
20
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5V
0
0
5
10
15
20
25
30
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
40
35
30
V
GS
= 10V
8V
7V
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 20A Value vs.
Junction Temperature
V
GS
= 10V
I
D
= 40A
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
D
- Amperes
25
20
15
10
5
6V
I
D
= 20A
5V
0.6
0
0
1
2
3
4
5
6
7
8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 20A Value vs.
Drain Current
3.6
3.2
2.8
2.4
V
GS
= 10V
T
J
= 125ºC
45
40
35
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
30
25
20
15
2.0
1.6
1.2
0.8
0
10
20
30
40
50
60
70
80
90
100
110
120
10
5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFH40N30Q
IXFT40N30Q
Fig. 7. Input Admittance
70
60
40
50
35
25ºC
50
45
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
40
30
25
20
15
10
125ºC
30
20
T
J
= 125ºC
25ºC
- 40ºC
10
5
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
0
10
20
30
40
50
60
70
80
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120
10
V
DS
= 150V
100
8
I
D
= 20A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
80
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
6
60
4
40
2
20
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
0
10
20
30
40
50
60
70
80
90
100
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
Ciss
Capacitance - PicoFarads
I
D
- Amperes
100
R
DS(on)
Limit
25µs
100µs
1,000
Coss
10
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1
0
5
10
15
20
25
30
35
40
1
10
100
DC
1ms
Crss
10ms
100
1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH40N30Q
IXFT40N30Q
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
Z
(th)JC
- ºC / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_40N30Q(7XQ)03-22-11-A
FPGA/CPLD
